Elastically Deformable Carrier for Layout-Independent Wafer Contacting
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Solution Overview
Problem
Conventional electrochemical etch-stop (ECES) processes for semiconductor wafers, particularly for power semiconductors and IGBTs, face limitations in layout flexibility and require additional lithographic processing and photo levels, which can lead to inefficiencies and difficulties in precise thinning due to parasitic thyristor latching issues.
Innovation Solution
A wafer contacting device with an elastically deformable carrier having an electrically conductive surface region allows for contact with multiple metallization regions on a wafer without needing dedicated diffusion and metallization structures, enabling layout-independent electrochemical etch-stop by applying controlled electrical potentials to both sides of the wafer, thereby overcoming the limitations of conventional methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional ECES processes use dedicated diffusion and metallization structures for contacting wafer regions, then electrical contact can be established, but layout flexibility is limited and additional lithographic processing is required
Solution Approach 1:
The elastically deformable carrier with electrically conductive surface region serves multiple functions: it provides mechanical support for the wafer, establishes electrical contact with multiple metallization regions simultaneously, and enables layout-independent contacting. This universal carrier design eliminates the need for dedicated diffusion and metallization structures, thereby improving layout flexibility while reducing device complexity
Solution Approach 2:
The invention changes the physical state of the carrier from rigid to elastically deformable, allowing it to adapt its shape to contact different metallization region configurations on the wafer. This parameter change enables the carrier to accommodate various layouts without requiring additional lithographic processing steps
2Manufacturing precision
If multiple metallization regions are contacted using conventional methods, then electrical contact is achieved, but the process requires precise alignment and additional photo levels
Solution Approach 1:
The elastically deformable carrier automatically adapts its shape to match the underlying metallization regions when pressure is applied, achieving self-alignment. This self-service mechanism eliminates the need for precise external alignment and additional photo levels, thereby improving contacting precision while reducing processing time
Solution Approach 2:
The carrier transitions from a static, rigid structure to a dynamic, elastically deformable one that can adapt its configuration in real-time to contact multiple metallization regions. This dynamic behavior enables simultaneous contacting with high precision without requiring time-consuming alignment procedures
3Stability of the object's composition
If rigid carriers are used for wafer contacting, then structural stability is maintained, but adaptability to different wafer layouts is reduced
Solution Approach 1:
The invention replaces rigid carriers with flexible, elastically deformable carriers that maintain structural stability through their material properties while gaining the ability to adapt to different wafer layouts. The elastic deformation allows the carrier to conform to various metallization region configurations without compromising its structural integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables precise thinning of semiconductor wafers without additional lithographic processing, reduces the need for photo levels, and allows simultaneous contacting of multiple areas, enhancing the flexibility and efficiency of the electrochemical etch-stop process, particularly for power semiconductors and IGBTs.
Implementation Method 1
an elastically deformable carrier disposed in the receiving region and including an electrically conductive surface region
Implementation Method 2
at least one voltage source coupled to the electrically conductive surface region of the carrier and to the electrolyte, and configured to apply a first electrical potential to the electrically conductive surface region and to apply a second electrical potential to the electrolyte
Implementation Method 3
an electrolyte in contact with at least a portion of a second side of the wafer opposite the first side
Data Source
AI summary
A wafer contacting device may include: a receiving region configured to receive a wafer; and an elastically deformable carrier disposed in the receiving region and including an electrically conductive surface region.