Dehydrating Monomer Polymer for EUV Resist Resolution
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Solution Overview
Problem
Current chemically amplified negative resist compositions for photolithography lack high sensitivity, maximum resolution, and high contrast, particularly in the miniaturization of patterns for advanced semiconductor fabrication.
Innovation Solution
A chemically amplified negative resist composition is developed, incorporating a polymer with repeat units derived from a monomer having a dehydrating functional group, which enhances pattern resolution, reduces line edge roughness (LER), and improves dose margin through a polarity switch during photolithography, specifically suitable for EUV and EB lithography processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified negative resist compositions are used, then the resist composition can be processed with standard photolithography, but the resolution, line edge roughness (LER), and dose margin are insufficient for miniaturization
Solution Approach 1:
The patent introduces a polymer with specific repeat units containing dehydrating functional groups (formula A1) to change the chemical parameters of the resist composition. This polymer contains aromatic rings with dehydrating groups that can undergo dehydration reactions upon acid catalysis, fundamentally altering the crosslinking mechanism and improving resolution and dose margin simultaneously
Solution Approach 2:
The patent creates a composite resist system by combining the base polymer (formula A1) with other resist components. The composite structure leverages the unique dehydration capability of the A1 polymer units while maintaining compatibility with standard photolithography chemistry, achieving enhanced performance without sacrificing process compatibility
2Ease of operation
If phenolic units are used in resist compositions, then the composition can be dissolved in aqueous alkaline developer, but the units are not transmissive to exposure light having a wavelength of 150 to 220 nm
Solution Approach 1:
The patent modifies the local chemical structure by introducing dehydrating functional groups (formula A1) that are specifically positioned to undergo dehydration reactions only after light exposure. This localized chemical transformation occurs after the light has passed through the polymer, allowing the polymer to remain transparent during exposure while still providing solubility for development
Solution Approach 2:
The patent incorporates acid-generating units (formula A6-A13) that perform preliminary action by generating acid upon light exposure before the dehydration reaction occurs. This sequence allows the polymer to first absorb light and generate acid, which then catalyzes the dehydration reaction, maintaining light transmissivity while enabling subsequent chemical transformation
3Reliability
If crosslinkers are added to resist compositions to insolubilize the polymer, then the polymer can be rendered insoluble in the developer, but the composition complexity increases
Solution Approach 1:
The patent enables the polymer to serve itself by incorporating dehydrating functional groups directly into the polymer backbone (formula A1). The polymer units themselves undergo dehydration reactions upon acid catalysis, eliminating the need for separate crosslinker additives. This self-crosslinking mechanism reduces composition complexity while maintaining the desired insolubility
Solution Approach 2:
The patent merges the crosslinking function with the polymer structure by incorporating dehydrating functional groups (formula A1) and acid-generating units (formula A6-A13) directly into the polymer repeat units. This integration combines multiple functions (solubility control, light absorption, acid generation, and crosslinking) into a single polymer material, eliminating the need for separate crosslinker additives
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high-resolution patterns with improved fidelity and reduced LER, enabling effective micropatterning in advanced lithography processes, particularly in EUV and EB lithography.
Implementation Method 1
an acid generator which is decomposed to generate an acid upon exposure to light
Implementation Method 2
a polymer comprising repeat units derived from a monomer having a dehydrating functional group, which enhances pattern resolution, reduces line edge roughness (LER), and improves dose margin through a polarity switch during photolithography
Implementation Method 3
a crosslinker which causes the polymer to crosslink in the presence of the acid serving as a catalyst, thus rendering the polymer insoluble in the developer
Implementation Method 4
the EB lithography, which is utilized as the ultra-fine microfabrication technique
Implementation Method 5
capable of forming smaller size patterns... specifically suitable for EUV and EB lithography processes
Data Source
AI summary
The chemically amplified negative resist composition has improved in resolution during pattern formation, which can form a resist pattern having improved LER, fidelity, and dose margin. The chemically amplified negative resist composition comprises a polymer comprising repeat units derived from a monomer having a dehydrating functional group is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER, fidelity, and dose margin.