Delay Circuit Load Adjustment for Stable Sense Amplifier Timing

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Solution Overview

Problem

Semiconductor memory devices face challenges in accurately activating sense amplifiers due to variations in transistor characteristics, leading to inconsistent read rates and potential false detections, as the delay time of the delay circuit is influenced by both N-type and P-type transistor fluctuations.

Innovation Solution

Incorporating a load adjusting circuit and a driving force adjusting circuit within the delay circuit, which adjust the load and driving force based on the threshold voltage of P-type transistors, reduces the dependence on P-type transistor characteristics, allowing the delay time to be determined by N-type transistor characteristics, thus stabilizing the activation timing of the sense amplifier.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the delay time is set to account for both N-type and P-type transistor variations, then the sense amplifier activation is reliable, but the read rate decreases due to excessive timing margins

Engineering Contradiction:
Improvesense amplifier activation reliabilityVSAvoidread rate
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The invention changes the parameter configuration of the delay circuit by introducing separate adjustment mechanisms for load capacitance and driving force. By independently tuning these parameters, the delay time can be precisely controlled to match the actual bit line voltage transition characteristics, eliminating excessive timing margins while ensuring reliable sense amplifier activation.

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If the delay circuit uses conventional transistor configurations, then the circuit is simple, but the delay time varies significantly due to transistor characteristic variations

Engineering Contradiction:
Improvedelay circuit complexityVSAvoiddelay time consistency
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The invention introduces dynamic adjustment capabilities to the delay circuit through controllable current sources and adjustable load capacitance. This allows the delay characteristics to be dynamically tuned to compensate for transistor variations, achieving consistent delay time without significantly increasing circuit complexity.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention implements feedback mechanisms where the delay circuit characteristics are adjusted based on detected timing information. By monitoring the actual delay performance and adjusting the load and driving force accordingly, the system achieves stable delay time despite transistor characteristic variations.

Inventive Principle:
Principle #23Feedback

3Reliability

If extra timing margins are added to ensure reliable sense amplifier activation, then false detections are reduced, but power consumption increases

Engineering Contradiction:
Improvedetection accuracyVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The invention optimizes the timing parameters by precisely controlling the delay circuit characteristics. This eliminates excessive timing margins while maintaining reliable detection, thereby reducing the duration of high-current states and lowering overall power consumption during read operations.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20140376319A1Delay circuit and semiconductor memory device
Publication Date: 2014.12.25 KK TOSHIBA
  • US20140376319A1 patent drawing
  • US20140376319A1 patent drawing
  • US20140376319A1 patent drawing

AI summary

According to an embodiment, a load adjusting circuit adjusts the load of an inverter circuit based on a threshold voltage of a first conductive type transistor provided on the inverter circuit, and a driving force adjusting circuit adjusts the driving force of the inverter circuit based on the threshold voltage of the first conductive type transistor.