Delivery Head System for Uniform Thin-Film Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing atomic layer deposition (ALD) systems face challenges in achieving precise and uniform gas flow delivery, particularly in proximity to the substrate, which affects the quality and efficiency of thin-film deposition, especially when dealing with moving substrates and high-volume manufacturing.
Innovation Solution
A delivery head system with a network of interconnecting supply chambers and directing channels, featuring elongated output openings and a diffusing channel formed by plates with relief patterns, allows for simultaneous and precise delivery of reactive and inert gases, ensuring uniform gas flow and backpressure over a large area, suitable for continuous operation at atmospheric pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CVD techniques are used for thin-film deposition, then deposition speed can be maintained, but film quality and conformal coating properties deteriorate
Solution Approach 1:
The delivery head is segmented into multiple independent gas delivery channels (first reactive gas channel, second reactive gas channel, purge gas channel) that can independently control gas flow to different regions of the substrate, enabling precise local deposition control while maintaining overall deposition efficiency
Solution Approach 2:
Different regions of the substrate receive different gas compositions and flow rates through the segmented channels, allowing optimization of deposition conditions for each local area to achieve superior conformal coating properties while maintaining high deposition speed
2Manufacturing precision
If gas flow is delivered in close proximity to substrate, then deposition uniformity improves, but gas flow control precision deteriorates
Solution Approach 1:
A purge gas channel is introduced as an intermediary between the reactive gas channels and the substrate, using inert purge gas to control the interaction between reactive gases and substrate, thereby improving deposition uniformity while maintaining precise gas flow control through separate channel management
Solution Approach 2:
The system uses pneumatic control through multiple independent gas channels with separate flow control mechanisms to deliver reactive and purge gases in close proximity to the substrate, achieving both deposition uniformity and precise gas flow control through pressure and flow rate regulation
3Productivity
If multiple reactive gases are delivered simultaneously, then deposition efficiency improves, but gas flow separation deteriorates
Solution Approach 1:
Multiple reactive gases are delivered through physically segmented independent channels (first reactive gas channel, second reactive gas channel) that maintain separate flow paths until reaching the substrate, enabling simultaneous delivery while preserving complete gas flow separation for controlled reaction
Solution Approach 2:
The purge gas channel extracts and removes excess reactive gases and byproducts from between the reactive gas channels and substrate, preventing unwanted gas interactions and maintaining precise gas flow separation even when multiple reactive gases are delivered simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables high-uniformity thin-film deposition on various substrates, including moving webs, with improved throughput and adaptability to different environments, maintaining uniformity and efficiency while reducing gas residence time and chemical usage.
Implementation Method 1
a flow diffuser and a corresponding method, wherein the flow diffuser comprises: a first plate having a relief pattern portion; and a second plate, wherein the first plate and the second plate are assembled to form an elongated output opening with a flow diffusing portion defined by the relief pattern portion
Data Source
Figure 1A~1D
Figure 2
Figure 3
AI summary
A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates (220. 230), superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed.