Demodulation Pixel Devices With Segmented Floating Diffusion Layers
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Solution Overview
Problem
Existing pixel devices face limitations in demodulating incident modulated light due to insufficient light intensity, leading to low signal-to-noise ratios and lengthy charge-carrier transport paths, which hinder applications requiring efficient demodulation, such as indirect time-of-flight technologies.
Innovation Solution
The pixel devices incorporate a combination of large photo-detection regions with minimized charge-carrier transport paths using multiple transfer gates and floating diffusion implant layers, allowing for efficient demodulation of incident modulated light by alternately conducting charge carriers to multiple floating diffusion implant layers, reducing transport lengths and enhancing signal acquisition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the photo-detection region is enlarged to collect more light, then light sensitivity is improved, but charge-carrier transport path length increases
Solution Approach 1:
The pixel device segments the photo-detection region into multiple zones, each associated with a separate floating diffusion implant layer. Charge carriers generated in each zone are collected by its corresponding floating diffusion layer, creating multiple shorter transport paths instead of one long path. This segmentation allows the overall photo-detection region to remain large for high light sensitivity while individual charge-carrier transport paths remain short for fast signal acquisition.
2Speed
If multiple transfer gates and floating diffusion implant layers are used to minimize charge-carrier transport paths, then signal acquisition speed is improved, but device complexity increases
Solution Approach 1:
The pixel device merges multiple functional components - transfer gates, floating diffusion implant layers, and photo-detection regions - into a single integrated structure. The transfer gates are positioned between the photo-detection region and floating diffusion layers, creating a unified charge-carrier collection system. This merging achieves fast signal acquisition through multiple short transport paths while maintaining manufacturing feasibility through integration rather than separate components.
3Reliability
If the photo-detection region is enlarged to improve light sensitivity, then signal-to-noise ratio is improved, but charge-carrier transport time increases
Solution Approach 1:
The pixel device segments the photo-detection region into multiple zones, each associated with a separate floating diffusion implant layer. Charge carriers generated in each zone are collected by its corresponding floating diffusion layer, creating multiple shorter transport paths instead of one long path. This segmentation allows the overall photo-detection region to remain large for high light sensitivity while individual charge-carrier transport paths remain short for fast signal acquisition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables reliable signal production and efficient demodulation of modulated light, even at low light intensities, preserving phase-delays information for distance measurement, thus expanding the applications of pixel devices.
Implementation Method 1
Light incident on the photo-detection region generates charge-carriers which travel through the photo-detection region and are sampled, thereby generating signals with characteristics of the incident light.
Implementation Method 2
modulated incident light can generate charge carriers with modulation characteristics representative of the modulated incident light
Data Source
Figure 1A~1B
Figure 2A~2B
Figure 2C~2D
AI summary
Pixel devices and arrays of pixel devices are operable to demodulate modulated light incident on a photo-detection region of the pixel devices. The pixel devices can include floating diffusion implant layers and transfer gates. The floating diffusion implant layers and transfer gates are disposed such that photo-generated charge carriers can be conducted to the floating diffusion implant layers over minimal charge-carrier transport paths.