Dendritic SiC Composite Filler for Thermal Expansion Matching
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Solution Overview
Problem
Existing composite materials with SiC filler achieve only about half of SiC's inherent thermal conductivity and do not adequately address the need for a small difference in thermal expansion coefficient with semiconductor elements, limiting their effectiveness in demanding environments.
Innovation Solution
A composite material with a continuous phase of metal or synthetic resin and SiC filler dispersed within, utilizing dendritic crystals with a circularity of less than 0.206, enhances thermal conductivity and reduces thermal expansion differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional SiC filler with regular shape is used in composite material, then the processing and dispersion is easier, but the thermal conductivity is reduced to about half of SiC's inherent thermal conductivity
Solution Approach 1:
The patent applies asymmetry by using dendritic SiC crystals with irregular, non-spherical shapes instead of conventional regular-shaped fillers. These asymmetric dendritic structures with multiple branches and facets create more contact points and pathways for heat conduction, enabling the composite material to achieve higher thermal conductivity (40-80 W/mK) compared to traditional fillers, while still maintaining ease of processing and dispersion in the resin matrix.
2Reliability
If SiC filler is used to improve thermal conductivity, then heat dissipation is enhanced, but the thermal expansion coefficient matching with semiconductor elements is not adequately addressed
Solution Approach 1:
The patent applies parameter changes by carefully controlling the composition ratio of SiC filler (70-90 vol%) in the resin matrix, and by selecting resin materials with specific thermal expansion properties. This compositional parameter optimization allows the composite material to achieve both high thermal conductivity (40-80 W/mK) and thermal expansion coefficient matching (5-15 ppm/K) with semiconductor elements, resolving the contradiction between heat dissipation performance and dimensional stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves thermal conductivity while maintaining a low coefficient of thermal expansion, effectively promoting heat dissipation and durability in semiconductor devices.
Implementation Method 1
the composite material has a thermal conductivity of 40 W/m. K or more and 80 W/m. K or less
Implementation Method 2
the composite material has a thermal expansion coefficient of 5 ppm/K or more and 15 ppm/K or less
Data Source
AI summary
A composite material includes a continuous phase and a silicon carbide filler. The continuous phase is made of a metal or a synthetic resin. The silicon carbide filler is dispersed in the continuous phase and includes dendritic crystals having a circularity in a cross-sectional view of less than 0.206. A semiconductor device includes a semiconductor element and a bonded member formed from the composite material into a plate shape or a layer shape and bonded to the semiconductor element.