Dense Barrier for III-V Semiconductor Die Periphery
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Solution Overview
Problem
GaN-based semiconductor devices are prone to oxidation and corrosion when exposed to humidity, especially under high electric fields, due to the diffusion of water and ions through the passivation layer, leading to delamination and device failure.
Innovation Solution
A dense barrier is implemented around the periphery of III-V semiconductor dies, composed of materials like silicon oxynitride or silicon nitride, to prevent the diffusion of water, water ions, sodium ions, and potassium ions, thereby protecting the active device region from humidity and ion-induced corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a passivation layer consisting of oxides and nitrides is used to protect the die sidewall, then the die is protected from physical damage during singulation, but the passivation layer has low density and does not function as a barrier against diffusion of water and other ions
Solution Approach 1:
The patent applies composite materials by combining multiple layers with different functions: a dense barrier layer (silicon nitride or silicon oxynitride) to block water and ion diffusion, and an outer passivation layer (oxides and nitrides) to provide mechanical protection. This composite structure resolves the contradiction by integrating both protective functions in a single system.
Solution Approach 2:
The dense barrier layer acts as an intermediary between the die sidewall and the external environment. It is positioned between the GaN device region and the humid environment, blocking the diffusion path of water and ions while allowing the outer passivation layer to provide mechanical protection without compromising the barrier function.
2Ease of manufacture
If the GaN sidewall is left open after singulation to provide access to the device region, then device fabrication and testing are simplified, but water and ions can directly contact and react with the GaN surface leading to oxidation and corrosion
Solution Approach 1:
The patent applies local quality by providing different protective characteristics at different locations. The dense barrier layer is specifically applied to the die sidewall region where water and ion diffusion is most problematic, while maintaining open access to the device region for fabrication and testing. This localized protection resolves the contradiction between ease of manufacture and protection from harmful factors.
3Stability of the object's composition
If a seal ring is grounded to provide defined edge potentials at the die sidewall, then electrical stability is improved, but potential differences at the open GaN surface still allow water and ions to react with GaN layers
Solution Approach 1:
The dense barrier layer serves as an intermediary that blocks the diffusion path of water and ions between the external environment and the GaN device region. Even when potential differences exist at the open GaN surface, the barrier layer prevents water and ions from reaching the GaN, thereby maintaining both electrical stability and protection against oxidation and corrosion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The barrier effectively blocks water and ion diffusion, preventing oxidation and corrosion of the GaN surface, thereby enhancing the reliability and longevity of GaN-based semiconductor devices in humid environments.
Implementation Method 1
The barrier has a density which prevents water, water ions (e.g. OH− and H3O+), sodium ions and potassium ions from diffusing through the barrier
Implementation Method 2
The barrier has a density which prevents water, water ions (e.g. OH− and H3O+), sodium ions and potassium ions from diffusing through the barrier
Data Source
AI summary
A semiconductor die includes an III-V semiconductor body having a periphery devoid of active devices, the periphery terminating at an edge face of the semiconductor die. The semiconductor die further includes a seal ring structure above the periphery of the III-V semiconductor body and a barrier. The barrier is disposed over the periphery of the III-V semiconductor body at least between the seal ring structure and the edge face of the semiconductor die. The barrier has a density which prevents water, water ions, sodium ions and potassium ions from diffusing through the barrier.