Dense Composite Material for Semiconductor Devices
Solution Overview
Problem
Existing composite materials for semiconductor manufacturing devices face sintering defects due to non-uniform distribution of titanium metal particles, leading to segregated regions and voids, which affect the thermal expansion, conductivity, and strength of the material.
Innovation Solution
A dense composite material with specific composition and particle distribution, including 43-63% titanium silicide, less than 40 μm maximum interparticle distance of silicon carbide, and 1% or less open porosity, produced by sintering a powder mixture of silicon carbide, titanium silicide, and titanium carbide in a hot press at 1350-1430°C, ensuring uniform particle distribution and high sintering quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a composite material includes silicon carbide particles and titanium-containing phases, then the coefficient of linear thermal expansion becomes close to alumina and thermal conductivity improves, but sintering defect portions (voids) form due to non-uniform distribution of titanium metal particles
Solution Approach 1:
The patent changes the particle size parameter of silicon carbide to a specific range (4-20 μm average diameter) and controls the maximum particle diameter to 40 μm or less. This parameter optimization ensures uniform distribution of titanium components while maintaining the desired thermal expansion coefficient (7.0-8.0 ppm/K) and thermal conductivity, eliminating sintering defects without sacrificing performance
Solution Approach 2:
The patent uses a composite material system comprising silicon carbide particles (43-60 mass%), titanium silicide (10-30 mass%), and titanium carbide (5-20 mass%). This specific composite composition achieves both the target thermal expansion match with alumina and high thermal conductivity while preventing void formation through proper phase distribution
2Ease of manufacture
If large particle diameter titanium metal particles are used, then the composite material can be formed, but the particle disposition becomes non-uniform leading to segregated regions and sintering defects
Solution Approach 1:
The patent strictly controls the particle size parameter of silicon carbide, specifying an average diameter of 4-20 μm and maximum diameter of 40 μm or less. This size parameter optimization enables uniform distribution of titanium metal particles throughout the composite, preventing segregation and ensuring homogeneous sintering without compromising manufacturability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting material exhibits a coefficient of linear thermal expansion close to alumina, high thermal conductivity, and sufficient strength, preventing separation of joined components at varying temperatures and maintaining high heat-dissipation ability, suitable for semiconductor manufacturing devices.
Implementation Method 1
sintering the powder mixture in a hot press at a temperature of 1350 to 1430° C.
Implementation Method 2
a sufficiently high thermal conductivity, packing density, and strength
Data Source
AI summary
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.