Dense Pier Structures for Stable 3D Memory Array Voids
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Solution Overview
Problem
In semiconductor manufacturing, voids formed between layers of material deposited over a substrate can lead to mechanical instability and poor tolerances in circuit structures, particularly in three-dimensional memory arrays.
Innovation Solution
The implementation of pier structures formed in contact with features from alternating layers of materials deposited over a substrate provides mechanical support, stabilizing voids and improving the consistency of feature formation within these voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If voids are formed between layers of material deposited over a substrate, then three-dimensional memory array structures can be created, but mechanical instability and poor tolerances occur in circuit structures
Solution Approach 1:
Pier structures are introduced as intermediary elements between the void regions and the surrounding material layers. These piers act as mechanical mediators that transfer and distribute stresses, preventing direct mechanical instability in the void-containing 3D memory structure while maintaining the desired void volume for memory cell formation.
Solution Approach 2:
The patent employs composite structural design where pier structures (made of one material) are integrated within or alongside the alternating layers of first and second materials. This composite approach combines the benefits of void formation for memory storage with the mechanical strength provided by the pier structures, resolving the contradiction between volume creation and structural reliability.
2Quantity of substance
If alternating layers of materials are deposited to form three-dimensional memory arrays, then memory cell capacity increases, but tolerances and variability in feature formation worsen
Solution Approach 1:
The pier structures serve as intermediary reference elements that define and maintain precise spatial relationships between alternating layers during deposition and subsequent processing. This intermediary framework ensures consistent tolerances and reduced variability in feature formation across the three-dimensional memory array, enabling high memory cell capacity with manufacturing precision.
3Reliability
If pier structures are added to provide mechanical support, then stability and tolerances of voids improve, but device complexity increases
Solution Approach 1:
The pier structures are designed to perform multiple functions simultaneously: providing mechanical support to stabilize voids, defining geometric tolerances for feature formation, and serving as integration points for circuit interconnects. This multi-functionality reduces the need for separate structural elements, thereby limiting the increase in device complexity while achieving improved stability and tolerances.
Data Source
AI summary
Methods, systems, and devices for dense piers for three-dimensional memory arrays are described. In some examples, a memory device may include pier structures formed in contact with features formed from alternating layers of materials deposited over a substrate. For example, a memory device may include alternating layers of a first material and a second material. In some examples, the alternating layers may be formed into a pair of interleaved comb structures. Pier structures may be formed in contact with the cross sectional patterns, and may provide mechanical support of cross-sectional pattern of the remaining material. In some examples, the piers may further act as a separator between memory cells or other features of the memory device. For example, the piers may extend into at least a portion of the interleaved comb structures, and may accordingly act as barriers during subsequent depositions of materials.