Deoxidization Treatment for Semiconductor Active Region Narrow-Width Effect
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Solution Overview
Problem
As semiconductor device integration density increases, the narrow-width effect occurs due to differences in threshold voltage between transistors in active regions of varying widths, leading to increased threshold voltage and reduced reliability.
Innovation Solution
A deoxidization treatment is performed on the substrate, including removing oxygen from the edges of the active region and high-k dielectric layer, using methods such as plasma processes in ammonia or hydrogen gas atmospheres or irradiating ultraviolet rays, followed by forming an etch stop layer to minimize oxygen concentration and reduce threshold voltage variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density is increased, then device area is reduced, but narrow-width effect increases causing threshold voltage variations
Solution Approach 1:
The patent applies different treatments to different regions of the active region. Specifically, the edges of the active region receive a deoxidization treatment (via plasma or UV) while the center region maintains its original oxygen content. This creates a non-uniform oxygen distribution that compensates for the narrow-width effect, allowing high integration density while maintaining threshold voltage consistency across devices of varying widths.
2Productivity
If channel width is decreased, then integration density is increased, but threshold voltage increases due to narrow-width effect
Solution Approach 1:
The patent changes the oxygen concentration parameter in the active region edges through deoxidization treatment. By reducing oxygen content at the edges (using plasma treatment with ammonia or hydrogen, or UV irradiation), the threshold voltage is adjusted downward to compensate for the narrow-width effect. This parameter change allows precise control of threshold voltage even when channel width is reduced for higher integration density.
3Manufacturing precision
If deoxidization treatment is performed, then oxygen concentration is reduced improving threshold voltage control, but additional process steps are required
Solution Approach 1:
The deoxidization treatment is performed as a preliminary step before forming the gate pattern and other subsequent processing steps. By removing oxygen from the active region edges in advance, the patent establishes the correct threshold voltage characteristics early in the manufacturing process. This preliminary action simplifies later processing and ensures consistent device performance without requiring complex adjustments in subsequent steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The deoxidization treatment reduces the narrow-width effect, improving the reliability and electrical characteristics of semiconductor devices by minimizing oxygen-related threshold voltage increases and over-etching, thereby enhancing device performance.
Implementation Method 1
The deoxidization treatment may include performing a plasma process in an ammonia gas or a hydrogen gas atmosphere before forming the etch stop layer
Implementation Method 2
performing a plasma process in an ammonia gas or a hydrogen gas atmosphere
Implementation Method 3
The deoxidization treatment may include irradiating ultraviolet rays on substantially the entire surface of the substrate before forming the etch stop layer
Data Source
AI summary
Methods of forming semiconductor devices are provided. The methods may include forming a gate pattern on an active region of a substrate. The methods may further include performing a deoxidization treatment on the substrate.