Deposition Method for Uniform Thin Film on Moving Web
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Solution Overview
Problem
Conventional atomic layer deposition (ALD) systems face challenges in achieving efficient and uniform thin-film deposition due to difficulties in rapidly sequencing gaseous precursors and purging gases, particularly when dealing with substrates of varying sizes and shapes, such as moving webs, and require complex mechanical and gas-routing systems to maintain precise gas flow and pressure control.
Innovation Solution
A deposition system with a distribution head that simultaneously exhausts multiple gaseous materials onto a substrate, allowing for continuous and uniform gas flow, and operates at atmospheric pressure, enabling efficient ALD on larger substrates and moving webs with improved gas mobility and separation, and controlled gas residence time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ALD systems use separate stages for introducing molecular precursors and purging gases, then the deposition process can maintain controlled reaction conditions, but the system complexity increases and gas flow sequencing becomes difficult to optimize
Solution Approach 1:
The patent combines multiple gas delivery functions into a single distribution head that simultaneously delivers multiple gaseous materials (precursors and purging gases) through multiple output openings. This merging of functions reduces the complexity of separate gas-routing systems while maintaining controlled reaction conditions through the distributed delivery architecture.
Solution Approach 2:
The distribution head segments the gas delivery function into multiple output openings that simultaneously deliver different gaseous materials to different locations on the substrate. This segmentation allows independent control of gas flows while using a unified delivery mechanism, reducing overall system complexity.
2Reliability
If conventional ALD systems use sequential precursor introduction, then chemical reaction control is maintained, but deposition throughput is limited
Solution Approach 1:
The patent enables continuous delivery of multiple gaseous materials simultaneously through the distribution head, eliminating the idle time between sequential precursor introductions. The reactive and inert gases flow continuously and simultaneously, maintaining useful action throughout the deposition process while preserving chemical reaction control through spatial distribution.
Solution Approach 2:
The patent transitions from temporal sequencing (sequential gas introduction) to spatial distribution (simultaneous delivery through multiple output openings). By adding the spatial dimension to gas delivery, the system achieves both continuous operation and controlled reactions that were previously mutually exclusive.
3Reliability
If conventional ALD systems operate with longer gas residence time, then complete precursor reaction is achieved, but deposition efficiency decreases
Solution Approach 1:
The patent creates different local environments through the distribution head, where reactive gases and inert purging gases are delivered to different locations on the substrate simultaneously. This local quality differentiation allows precursor reactions to complete in reactive zones while inert zones continuously remove excess precursors, achieving both complete reaction and reduced residence time.
4Manufacturing precision
If conventional ALD systems use complex gas-routing systems for precise flow control, then deposition uniformity is maintained, but the system becomes less adaptable to varying substrate sizes and shapes
Solution Approach 1:
The distribution head is designed with multiple output openings that can deliver different gaseous materials to different locations, creating a universal delivery system that adapts to various substrate sizes and shapes. The same device structure maintains deposition uniformity across different substrate configurations without requiring complex reconfigurable gas-routing systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-throughput, uniform thin-film deposition with reduced gas residence time and improved chemical utilization efficiency, suitable for large-area and web-based substrates, while maintaining a compact and cost-effective apparatus.
Implementation Method 1
the first, second, and third gaseous materials are simultaneously exhausted from the output openings in the output face
Implementation Method 2
pressure generated due to flow of one or more of the gaseous materials from the delivery head to the substrate surface for thin film deposition provides at least part of the force separating the output face of the delivery head from the surface of the substrate
Implementation Method 3
Chemical Vapour Deposition (CVD) that uses chemically reactive molecules that react in a reaction chamber to deposit a desired film on a substrate
Implementation Method 4
A substrate is kept at a well-controlled temperature under controlled pressure conditions to promote chemical reaction between these molecular precursors
Data Source
Figure 1
Figure 2
Figure 3A~3B
AI summary
A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head, wherein the substrate is at a separation distance of within 0.3 mm of the output face of the delivery head.