Deposition Ring Vertical Spacing for PVD Film Uniformity
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Solution Overview
Problem
Conventional process kit designs in physical vapor deposition (PVD) chambers affect film uniformity and throughput due to close proximity of components to substrates, altering electric fields and resulting in non-uniform film deposition near the edges of substrates.
Innovation Solution
A process kit comprising a deposition ring with a unique cylindrical and annular ring structure, supported by a pedestal assembly, which reduces the impact on electric fields by maintaining a greater vertical distance between the substrate and the deposition ring, along with a ground shield and cover ring that confine plasma effectively, promoting uniformity and repeatability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If process kit components are positioned in close proximity to substrates, then plasma confinement and deposition efficiency are improved, but film uniformity deteriorates due to altered electric fields near substrate edges
Solution Approach 1:
The deposition ring is designed with a specific vertical height dimension that positions it at an optimized distance from the substrate. This dimensional parameter controls the electric field distribution in the vertical dimension while maintaining horizontal plasma confinement, thereby resolving the contradiction between deposition efficiency and film uniformity.
Solution Approach 2:
The invention modifies the geometric parameters of the deposition ring, specifically its height and radial dimensions, to optimize the electric field distribution. By changing these parameters, the system achieves both good plasma confinement for efficient deposition and minimal distortion of electric fields to maintain film uniformity.
2Reliability
If process kit components are positioned in close proximity to substrates, then plasma confinement is improved, but electric field distortion increases affecting film uniformity
Solution Approach 1:
The deposition ring acts as an intermediary component between the plasma source and the substrate. It provides plasma confinement while its specific geometric design minimizes direct interference with the electric fields at the substrate surface, thus maintaining both plasma confinement and film uniformity.
Solution Approach 2:
By optimizing the vertical height of the deposition ring, the invention creates a spatial separation that allows plasma confinement in the horizontal dimension while minimizing electric field distortion in the vertical dimension near the substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces the effects on electric fields near the substrate edges, enhancing film uniformity and deposition efficiency by maintaining a greater vertical distance and using a ground shield to confine plasma, thereby improving deposition uniformity and throughput.
Implementation Method 1
A chucking voltage is applied to the electrodes to electrostatically hold the substrate to the ESC
Implementation Method 2
Bombardment of the target by ions of the inert gas results in ejection of atoms of the target material
Implementation Method 3
Physical vapor deposition (PVD), or sputtering, is one of the most commonly used processes in the fabrication of electronic devices
Implementation Method 4
Confining the plasma and the ejected atoms to the processing region helps maintain other components in the chamber free from deposited materials
Data Source
AI summary
Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.