Deposition Source Cooling via High Thermal Conductivity Gas
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Solution Overview
Problem
Current methods for cooling deposition sources in OLED manufacturing are inefficient, resulting in prolonged downtime and reduced production availability due to the lengthy cooling process from high operation temperatures.
Innovation Solution
A method involving the introduction of a cooling gas with high thermal conductivity (λ≥0.05 W/(m*K)) into the deposition chamber, combined with switching off the crucible heater and maintaining heating of the distribution assembly, and providing the cooling gas in a free space between the distribution assembly and a shield arrangement, which is cooled using a contact cooling system.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional cooling methods are used for the deposition source, then the deposition source can be cooled from operation temperature to below 100°C, but the cooling time is excessively long (around 8 hours)
Solution Approach 1:
The patent changes the thermal conductivity parameter of the cooling medium by introducing a gas with high thermal conductivity (λ≥0.05 W/(m*K)) into the deposition chamber. This parameter change enables significantly faster heat transfer from the deposition source, reducing cooling time from 8 hours to under 1 hour while achieving the required temperature reduction from 500°C to below 100°C.
Solution Approach 2:
The patent introduces a cooling gas as an intermediary substance between the deposition source and the environment. This cooling gas acts as a heat transfer medium that facilitates rapid cooling of the deposition source by conducting heat away from the source, enabling the temperature reduction to occur in under 1 hour rather than 8 hours.
2Productivity
If the deposition source is cooled rapidly to reduce downtime, then production availability is improved, but the cooling process may cause thermal stress or damage to the deposition source components
Solution Approach 1:
The patent carefully controls the thermal conductivity parameter of the cooling gas (λ≥0.05 W/(m*K)) to achieve rapid cooling while managing thermal stress. By selecting gases with specific thermal conductivity properties and controlling their introduction into the chamber, the system achieves fast cooling (under 1 hour) that improves production availability while minimizing thermal shock to the deposition source components.
Solution Approach 2:
The patent employs a dynamic cooling approach by continuously introducing cooling gas into the deposition chamber during the cooling process. This dynamic method allows for controlled heat removal that reduces thermal stress on components while achieving rapid cooling, thereby maintaining deposition source integrity and improving production availability simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the cooling time from 500° C to 100° C, achieving cooling in under 1 hour compared to conventional methods which take around 8 hours, thereby minimizing production downtime.
Implementation Method 1
introducing a cooling gas into the deposition chamber, the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)]
Implementation Method 2
introducing a cooling gas into the deposition chamber at a pressure p of 1 mbar≤p≤100 mbar
Data Source
AI summary
A method (100) of cooling a deposition source (200) is described. The method includes stopping (110) depositing material from the deposition source, the deposition source being arranged in a deposition chamber (250), and introducing (120) a cooling gas into the deposition chamber (250), the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)]. Further, a chamber for cooling a deposition source is described. The chamber includes a deposition source being arranged in the chamber. Further, the chamber includes a cooling gas supply system configured for providing a cooling gas into the chamber, the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)].