Deposition Sub-Chamber Variable Flow Conduits
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Solution Overview
Problem
Existing dielectric deposition processes, such as CVD and ALD, face challenges in achieving uniformity and conformality, especially in high aspect ratio features, and often result in unwanted film deposition on chamber walls, leading to contamination and reduced productivity.
Innovation Solution
A chemical deposition apparatus with a plurality of conduits that allows by-product and reactant gases to flow past the edge of the substrate, maintaining a pressure differential and providing uniform gas-flow dynamics, which reduces thickness variations and particle buildup, and enhances film uniformity and reaction rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CVD or ALD deposition processes are used to fill high aspect ratio features, then dielectric films can be deposited, but uniformity and conformality deteriorate due to process limitations
Solution Approach 1:
The deposition chamber is segmented into a main chamber and a separate deposition sub-chamber. The sub-chamber is positioned close to the substrate and accessed through multiple small conduits, creating localized deposition zones that improve film uniformity and conformality in high aspect ratio features while maintaining reliable void-free filling
Solution Approach 2:
The deposition sub-chamber provides localized deposition conditions directly at the substrate location. Reactant gases are delivered through multiple small conduits positioned close to the substrate surface, creating locally optimized gas flow dynamics that enhance film quality and conformality where needed most
2Manufacturing precision
If deposition processes are conducted in a sealed chamber to improve film conformality, then conformality improves, but unwanted film deposition on chamber walls increases causing contamination
Solution Approach 1:
The deposition process is extracted from the main sealed chamber into a separate deposition sub-chamber. This sub-chamber is accessed through small conduits that allow reactant gases to reach the substrate while preventing bulk gas exposure to chamber walls, thereby maintaining film conformality while eliminating wall contamination
Solution Approach 2:
Multiple small conduits act as intermediaries between the main chamber and the deposition sub-chamber. These conduits deliver reactant gases directly to the substrate location while their small size and positioning prevent gas-phase reactions on chamber walls, serving as a mediator that enables conformal deposition without contamination
3Manufacturing precision
If ALD cycles are repeated numerous times to achieve adequate film thickness, then conformal films can be formed, but deposition time increases making the process unacceptably slow
Solution Approach 1:
The benefits of ALD (conformal deposition) and CVD (high deposition rate) are merged in the separate deposition sub-chamber. The localized gas flow environment enables rapid film growth while maintaining the conformality characteristics of ALD, achieving both goals simultaneously rather than requiring numerous slow cycles
Solution Approach 2:
The deposition system uses dynamic gas flow control through the multiple conduits to optimize the deposition environment. By controlling reactant gas delivery and chamber pressure dynamically, the system achieves high deposition rates while maintaining the conformal film quality that would otherwise require slow ALD cycling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves improved film uniformity and faster reaction rates by ensuring uniform gas-flow dynamics and reducing unwanted deposition on chamber walls, thereby increasing productivity and reducing the need for frequent chamber cleaning.
Implementation Method 1
maintaining a pressure differential between the deposition sub-chamber and the isolation chamber during deposition
Implementation Method 2
A reactant gas is then flowed through a vapor injection port to the substrate, causing a film to deposit on the substrate
Implementation Method 3
The conduits are operable to provide a path for process gases and gaseous by-products from the deposition sub-chamber to the isolation chamber
Data Source
AI summary
An apparatus and method for depositing film on a substrate includes a plurality of conduits that allow by-product and reactant gases to flow past the edge of a substrate. The apparatus and process of the present invention has several advantages for enhanced chamber performance, particularly for micro-volume chambers using pulsed deposition layer processes.