Depth-Dependent Oxidation Modeling in Virtual Fabrication
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Solution Overview
Problem
The increasing complexity of semiconductor fabrication processes, particularly at advanced technology nodes, leads to lengthy and costly trial-and-error experimental methodologies, resulting in significant resources being spent on experimental wafers and characterization structures with many runs yielding negative or null results.
Innovation Solution
A virtual fabrication environment is utilized to perform depth-dependent oxidation and etch modeling, enabling the simulation of oxidant dispersion and etchant concentration in a 3D structural model, allowing for predictive modeling of semiconductor device structures and reducing the need for physical experimentation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If trial-and-error experimental methodology is used to develop semiconductor fabrication processes, then process development can be performed with physical validation, but the cost and duration increase significantly
Solution Approach 1:
The patent performs preliminary oxidation and etch modeling calculations before physical fabrication to predict process outcomes. The system calculates depth-dependent oxidation profiles and etch rates in advance, allowing process developers to optimize parameters virtually before committing to expensive and time-consuming experimental runs, thereby reducing both development time and the number of physical trial-and-error iterations needed.
Solution Approach 2:
The patent creates a virtual copy of the physical fabrication process through computational modeling. The system replicates the oxidation and etching processes in silico by solving diffusion equations and modeling reaction kinetics, producing virtual process outcomes that mirror physical experiments. This digital twin approach allows validation of process assumptions without consuming physical wafers or fabrication time.
2Productivity
If depth-dependent oxidation modeling is performed in a virtual fabrication environment, then process development speed increases, but modeling complexity increases
Solution Approach 1:
The patent segments the oxidation modeling process into discrete depth-dependent calculations. The system divides the substrate into multiple depth layers and performs separate oxidation calculations for each layer, accounting for varying oxidant concentration profiles. This segmentation approach enables accurate depth-dependent modeling while maintaining computational efficiency through modular processing.
Solution Approach 2:
The patent dynamically adjusts oxidation model parameters based on depth position within the substrate. The system modifies oxidant concentration, diffusion coefficients, and reaction rates as functions of depth to capture the varying chemical environment at different substrate levels. This parameter adaptation enables realistic modeling of depth-dependent oxidation without requiring overly complex computational frameworks.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach accelerates the development of semiconductor processes, reduces costs, and enhances the speed of process verification and visualization, enabling faster and more efficient semiconductor device development by simulating complex interrelationships between process sequences and design data.
Implementation Method 1
model, as part of a process sequence, oxidant dispersion in a depth-dependent manner
Implementation Method 2
model, as part of a process sequence, etchant concentration in a depth-dependent manner
Data Source
AI summary
Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.