Detachable Injector Gas Supply for Uniform Substrate Processing
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in uniformly controlling the flow rate and temperature of gases supplied to substrates during atomic layer deposition, leading to inconsistencies in film formation on substrates such as semiconductor wafers.
Innovation Solution
The apparatus features a gas supply unit with a detachable injector and ejector system, where the injector and ejector are designed to span through gas supply and exhaust chambers, respectively, with adjustable flow rate and temperature control for each region of the substrate, allowing for precise gas distribution and exhaust.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional gas supply system with fixed injectors is used, then the structure is simple, but the uniformity of gas flow rate and temperature control across different substrate regions is poor
Solution Approach 1:
The gas supply system is segmented into multiple independent injector units, each capable of controlling gas flow rate and temperature individually. Each injector is equipped with separate control mechanisms for different gas streams, allowing precise regional control over the substrate surface while maintaining a modular structure that doesn't overly complicate the overall system.
Solution Approach 2:
The system employs dynamic control capabilities where gas flow rates and temperatures can be adjusted independently for different regions during the deposition process. This dynamic adjustability enables real-time optimization of film uniformity without requiring a completely complex fixed structure, as parameters can be modified to accommodate different processing requirements.
2Manufacturing precision
If individual control of gas flow rate and temperature for each region is implemented, then the uniformity of substrate processing is improved, but the device complexity increases
Solution Approach 1:
The control system is divided into separate control modules for each injector unit, with each module managing specific gas flow and temperature parameters for its associated region. This segmentation allows independent optimization of each control module without requiring a monolithic complex control system, making the overall control architecture more manageable while achieving regional precision.
Solution Approach 2:
Each injector unit is equipped with localized control capabilities tailored to its specific region's requirements, with independent flow rate and temperature controls. This local quality approach ensures that each region receives precisely the conditions it needs for optimal film deposition, improving overall substrate uniformity without requiring every part of the system to have maximum complexity.
Data Source
AI summary
A substrate processing apparatus includes: a processing container capable of accommodating a substrate holder that holds substrates; a gas supply chamber provided in a side wall of the processing container, a supply-side pipe extending horizontally from the gas supply chamber, and an injector detachably disposed spanning through the gas supply chamber and the supply-side pipe.