Detection Base Plate Layout for Hydrogen-Stable Flat-Panel Detectors
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Solution Overview
Problem
Existing flat-panel X-ray detectors face issues with signal interference and instability due to hydrogen atom infiltration, which affects the performance and accuracy of image collection, particularly when using metal oxide thin-film transistors.
Innovation Solution
A detection base plate design featuring a substrate with detection pixel units that include a thin-film transistor, a sacrificial layer, and a photoelectric conversion part, where the sacrificial layer is positioned between the transistor and the photoelectric conversion part to protect the transistor from hydrogen atoms, and the sacrificial layers are mutually independent to prevent signal interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If hydrogen atoms are present in the detection base plate, then manufacturing is easier, but thin-film transistor performance deteriorates due to interference
Solution Approach 1:
The patent extracts and removes hydrogen atoms from the detection base plate through a plasma treatment process. The plasma treatment is applied to the surface of the detection base plate to desorb and eliminate hydrogen atoms, thereby preventing their interference with thin-film transistor performance while maintaining manufacturing feasibility.
Solution Approach 2:
The patent employs a plasma treatment process that creates a controlled environment to remove hydrogen atoms. The plasma treatment effectively creates an inert environment on the surface of the detection base plate, preventing hydrogen atom interference with the thin-film transistors.
2Illumination intensity
If signal interference occurs in the detection base plate, then image quality improves, but detection accuracy deteriorates
Solution Approach 1:
The patent removes the source of signal interference by extracting hydrogen atoms from the detection base plate through plasma treatment. This eliminates the interference that would otherwise degrade detection accuracy, thereby improving the overall detection performance and accuracy of the flat-panel detector.
3Reliability
If sacrificial layer is added between thin-film transistor and photoelectric conversion part, then hydrogen atom blocking improves, but device complexity increases
Solution Approach 1:
The patent introduces a sacrificial layer as an intermediary component between the thin-film transistor and the photoelectric conversion part. This sacrificial layer serves as a mediator that blocks hydrogen atoms from reaching the thin-film transistor while maintaining the overall structural integrity and functionality of the device.
Solution Approach 2:
The sacrificial layer is deposited in advance during the manufacturing process, before the photoelectric conversion part is formed. This preliminary action ensures that hydrogen atom blocking is established early, preventing interference with the thin-film transistor without requiring additional complex steps later in the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the stability and performance of the thin-film transistors by preventing hydrogen atom infiltration, improving the detection accuracy and reducing signal interference, thereby enabling stable and accurate image collection.
Implementation Method 1
The sacrificial layer is positioned between the thin-film transistor and the photoelectric conversion part, preventing hydrogen atom infiltration
Implementation Method 2
a thin-film transistor, a sacrificial layer and a photoelectric conversion layer disposed on the substrate
Data Source
AI summary
A detection base plate and a flat-panel detector. The detection base plate comprises multiple detection pixel units arranged in an array. Each detection pixel unit comprises: a thin-film transistor, a sacrificial layer and a photoelectric conversion part that are disposed on a substrate, wherein the sacrificial layer is located between the thin-film transistor and the photoelectric conversion part; the thin-film transistor comprises an active layer, a first electrode and a second electrode; at least part of an orthographic projection of the active layer on the substrate is located within an orthographic projection of the sacrificial layer on the substrate; and the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode. In the detection base plate, the sacrificial layers of the detection pixel units are mutually independent.