Detection Circuit ESD Protection Fuse Isolation
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Solution Overview
Problem
The increasing integration of integrated circuits makes gate dielectric layers more susceptible to damage from electrostatic discharge (ESD), necessitating effective ESD protection without interfering with transistor measurements.
Innovation Solution
A detection circuit incorporating an ESD protection device, a fuse, and a transistor, where the fuse is blown to isolate the ESD protection device from the transistor, allowing for accurate measurement of drain currents and determining the ESD protection capacity, including self and external protection capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an ESD protection device is added to protect the transistor, then the reliability of the transistor against ESD damage is improved, but the device complexity increases due to additional components and testing requirements
Solution Approach 1:
The detection function is segmented into two separate detection circuits: a first detection circuit for detecting self ESD protection capacity (with the fuse blown to isolate the transistor) and a second detection circuit for detecting external ESD protection capacity (with the fuse intact). This segmentation allows each circuit to be optimized for its specific detection purpose while maintaining overall system reliability.
Solution Approach 2:
A fuse is introduced as an intermediary element between the ESD protection device and the transistor. The fuse can be blown to isolate the transistor from the ESD protection device during self-capacity detection, and remains intact during external capacity detection. This intermediary enables flexible configuration for different detection scenarios without permanently altering the circuit structure.
2Reliability
If the ESD protection device is connected to the transistor, then the ESD protection function is provided, but the measurement precision of transistor drain current is reduced due to interference from the ESD protection device
Solution Approach 1:
The fuse is pre-configured in the circuit before detection begins. For self-capacity detection, the fuse is blown in advance to isolate the transistor, ensuring that the transistor does not interfere with the measurement. For external capacity detection, the fuse remains intact. This preliminary action enables accurate measurements by establishing the appropriate circuit configuration before each detection operation.
Solution Approach 2:
The detection process is divided into two distinct phases using separate detection circuits. The first detection circuit measures self-capacity with the fuse blown, isolating the transistor. The second detection circuit measures external capacity with the fuse intact, allowing the ESD protection device to function. This segmentation eliminates measurement interference while maintaining protection functionality.
3Measurement precision
If the fuse is blown to isolate the ESD protection device for measurement, then the measurement precision is improved, but the reliability of ESD protection is temporarily reduced
Solution Approach 1:
The system uses two separate detection circuits for different detection purposes. The first detection circuit is used when the fuse is blown to measure self-capacity with high precision. The second detection circuit is used when the fuse is intact to measure external capacity while maintaining ESD protection. This segmentation ensures that ESD protection reliability is maintained during external capacity detection while allowing precise measurement during self-capacity detection.
Solution Approach 2:
The system changes the state of the fuse (blown or intact) and switches between different detection circuits based on the detection objective. When self-capacity detection is needed, the fuse is blown and the first detection circuit is used. When external capacity detection is needed, the fuse remains intact and the second detection circuit is used. This parameter change approach allows optimization for measurement precision when needed while maintaining protection reliability when required.
Data Source
AI summary
The embodiments provide a detection circuit and a detection method. The detection circuit includes an ESD protection device, a first fuse and a transistor. A first terminal of the ESD protection device is connected to a first terminal of the first fuse, and a connection terminal of the ESD protection device and the first fuse serves as a first test terminal; a second terminal of the first fuse is connected to a gate electrode of the transistor, and a connection terminal of the first fuse and the transistor serves as a second test terminal; and a second terminal of the ESD protection device is connected to at least one of a source electrode, drain electrode or substrate of the transistor, and a connection terminal of the ESD protection device and the transistor serves as a third test terminal.