Semiconductor Detector Charge Sharing Correction via Bi-parametric Spectra
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Solution Overview
Problem
Semiconductor detectors face challenges in achieving high energy and spatial resolution due to charge carrier trapping by defects in the material, leading to incomplete collection of holes and reduced energy resolution, and the phenomenon of charge sharing becomes more significant as pixel size decreases, altering information about energy and spatial localization of photon interactions.
Innovation Solution
The process involves determining the signal representative of the sum of charges detected by all or part of the anodes, establishing bi-parametric spectra to assess charge sharing and collection loss, and applying appropriate treatments to correct for these issues, including suppressing events with charge collection loss or extracting energy from the cathode signal to maintain detection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If pixel size is reduced to improve spatial resolution, then spatial resolution is improved, but charge sharing becomes more significant and alters energy and spatial localization information
Solution Approach 1:
The patent implements a feedback mechanism by using bi-parametric spectra analysis to detect charge sharing events. The system measures signals from multiple anodes simultaneously, identifies when charge sharing occurs through spectral analysis, and applies corrective treatments to restore accurate energy and spatial localization information, thus compensating for the information loss caused by reduced pixel size
Solution Approach 2:
The patent employs a composite approach by combining signals from multiple anodes and using bi-parametric spectral analysis. This composite method integrates information from affected pixels to reconstruct accurate energy and spatial localization data, effectively mitigating the information loss that occurs when pixel size is reduced
2Manufacturing precision
If pixel size is reduced to improve spatial resolution, then spatial resolution is improved, but charge collection efficiency deteriorates due to increased charge sharing
Solution Approach 1:
The system uses bi-parametric spectral feedback to identify charge sharing events and applies corrective treatments. By detecting when charge sharing reduces collection efficiency and applying appropriate corrections, the system maintains productivity despite the increased charge sharing inherent in reduced pixel size designs
Solution Approach 2:
The patent changes the parameter of pixel size to reduce dimensions for better spatial resolution, while simultaneously implementing parameter-based corrections through bi-parametric spectral analysis to compensate for the resulting charge sharing effects and maintain collection efficiency
3Ease of manufacture
If semiconductor material defects are present, then material is easier to manufacture, but charge carrier transport property deteriorates leading to incomplete collection
Solution Approach 1:
The patent implements feedback through bi-parametric spectral analysis that detects incomplete charge collection caused by material defects. By identifying events with transport issues through spectral characteristics and applying corrective treatments, the system compensates for the unreliable charge carrier transport while maintaining ease of material manufacture
Solution Approach 2:
The system performs self-correction by using its own measurement capabilities (bi-parametric spectral analysis) to identify and correct for charge collection losses. The detector automatically compensates for its own material defects without requiring external calibration or material improvement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach optimizes the spatial and energy resolution of semiconductor detectors by accounting for charge sharing and collection losses, improving the accuracy of photon interaction depth correction and maintaining detection efficiency, even with reduced pixel sizes.
Implementation Method 1
the interaction of each of the X or γ photons within the semiconductor material
Implementation Method 2
the interaction of incident photons with said semiconductor material
Implementation Method 3
This bias voltage creates an electric field, capable of inducing the displacement of electric charges
Implementation Method 4
the electrons created are directed towards the anode (positive electrode) and the holes will move towards the cathode (negative electrode)
Data Source
Figure 1~3
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Figure 8
AI summary
The method involves determining a signal representative of a sum of charges detected by anodes by measuring an induced signal generated due to an interaction between an incident radiation and a semiconductor material constituting a detector. Bi-parametric spectra are established as a function of the determined signal. The charge collection loss is determined based on the established bi-parametric spectra when the charge sharing occurs on a pixelated anode.