Majority Current Detector With Isolation Trenches
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current Current-Assisted Photonic Demodulators (CAPDs) face challenges in reducing pixel size while avoiding crosstalk, achieving high electrical field strength for high detectivity, and improving data binning methods, which are hindered by high power consumption and inefficient data read-out processes.
Innovation Solution
The implementation of trench isolation regions in the semiconductor layer between control regions to deflect majority carrier currents, increasing their path length and reducing amplitude, thereby decreasing power consumption and enabling closer pixel packing, while also allowing for individual control of taps to create a larger operational pixel structure and improve data binning efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the distance between control regions is increased to reduce power consumption, then power consumption is reduced, but the device size increases
Solution Approach 1:
The patent introduces isolation means (trenches or barriers) between control regions that extend in the vertical dimension or laterally to increase the effective path length of majority carrier currents. This allows the current path to be lengthened without increasing the horizontal distance between control regions, thereby reducing power consumption while maintaining compact device dimensions.
Solution Approach 2:
The isolation means act as intermediary structures between control regions, forcing majority carrier currents to traverse a longer path by deflecting them around these isolation elements. This mediator approach increases the effective resistance and reduces current amplitude without requiring larger spacing between control regions.
2Area of moving object
If the pixel size is reduced to increase pixel density, then pixel density is improved, but crosstalk between neighbouring pixels increases
Solution Approach 1:
The patent divides the semiconductor structure into isolated regions using trenches or barrier structures between pixels and between control regions. This segmentation creates physical and electrical isolation that prevents charge carrier diffusion and crosstalk, enabling smaller pixel sizes while maintaining signal integrity.
Solution Approach 2:
Isolation trenches and barriers serve as intermediary structures between adjacent pixels and control regions, acting as physical and electrical barriers that prevent harmful charge exchange (crosstalk) while allowing the pixels to be closely packed.
3Measurement precision
If the electrical field strength is increased to improve detectivity, then detectivity is improved, but power consumption increases
Solution Approach 1:
The patent applies isolation means selectively between control regions to create localized field enhancement. By concentrating the electrical field in specific detection regions while using isolation structures to control current paths, the system achieves high detectivity in critical areas without requiring uniformly high field strength throughout the entire device, thereby reducing overall power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces power consumption, minimizes crosstalk, and enhances data binning by increasing the path length of majority carrier currents, allowing for closer pixel packing and more efficient data collection, thereby improving image quality and reducing read-out noise.
Implementation Method 1
a majority carrier current is generated between two control regions and wherein photo-generated minority carriers are directed towards a detection region under the influence of an electrical field generated between the control regions
Implementation Method 2
detecting an electromagnetic radiation impinging on a semiconductor layer, wherein a majority carrier current is generated between two control regions and wherein photo-generated minority carriers are directed towards a detection region
Data Source
Figure 1
Figure 2A~2C
Figure 3
AI summary
The present disclosure relates to a detector device (300) assisted by majority current (104, 105), comprising a semiconductor layer of a first conductivity type (106), at least two control regions of the first conductivity type (100, 115), at least one detection region of a second conductivity type (101, 116) opposite to the first conductivity type and a first source (110) for generating a first majority carrier current (104) associated with an electrical field, wherein it further comprises isolation means (103) formed in the semiconductor layer and located between said two control regions, for deflecting the first majority carrier current generated by the first source between said two control regions and, hence, increasing the length of the first majority current path, reducing the amplitude of said first majority carrier current and, therefore, reducing the power consumption of the detector device.