Detector Material Composition Grading for Multicolor Infrared Sensing
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Solution Overview
Problem
Existing infrared detectors are monochromatic, leading to complex systems, low detection efficiency, high costs, and inability to accurately identify targets with unknown specific emissivity, as they require multiple imaging paths and filters, limiting their effectiveness in multi-color and wide-spectrum applications.
Innovation Solution
A method involving the epitaxial growth of a gallium compound buffer layer, deposition of silicon dioxide, and photolithography to create strip growth regions, followed by the growth of InxGaAs/GaAs quantum wells or InAs/GaSb superlattices using molecular beam epitaxy, allowing for continuous composition and layer thickness changes in detector materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If traditional multi-color detectors are formed by combining detectors of different bands, then detection ability for multiple colors and wavelengths is achieved, but device complexity increases due to multiple imaging paths and filters
Solution Approach 1:
The patent merges multiple detector bands into a single integrated detector device. By growing different quantum well structures (InGaAs, InAsSb, InAsGaSb) and superlattice structures (InAs/GaSb, InAs/InSb) on the same substrate, the detector achieves multi-color and wide-spectrum detection capabilities without requiring multiple separate imaging paths and filters, thus reducing device complexity while maintaining detection ability
Solution Approach 2:
The patent creates a universal detector that can detect across multiple spectral ranges (infrared bands) using a single device. The detector incorporates multiple quantum well and superlattice structures that respond to different wavelengths, enabling one device to perform functions previously requiring multiple specialized detectors, thereby reducing overall system complexity
2Adaptability or versatility
If traditional multi-color detectors use multiple imaging paths and filters, then multi-color detection is achieved, but detection efficiency decreases
Solution Approach 1:
The patent combines multiple detection functions into a single imaging path by integrating different quantum well and superlattice detector structures on one substrate. This eliminates the need for multiple separate imaging paths and filters, allowing all spectral bands to be detected simultaneously through one optical path, thereby significantly improving detection efficiency
3Adaptability or versatility
If traditional multi-color detectors assemble multiple filters, then multi-color detection capability is achieved, but system complexity and volume increase
Solution Approach 1:
The patent merges the functions of multiple filters into a single detector structure by growing different quantum well and superlattice layers on the same substrate. Each layer responds to different wavelength ranges, eliminating the need for physical filters and reducing the overall system volume while maintaining multi-color detection capability
Solution Approach 2:
The patent transitions from a spatial arrangement of multiple filters and detectors to a vertical layered structure. By stacking different quantum well and superlattice layers in the vertical dimension, the detector achieves spectral discrimination without requiring lateral separation of filters, thereby compacting the system volume
4Device complexity
If monochromatic detectors are used, then system simplicity is maintained, but ability to accurately identify targets with unknown specific emissivity is lost
Solution Approach 1:
The patent changes the spectral response parameters of the detector by incorporating multiple quantum well and superlattice structures with different bandgaps. This enables the detector to measure radiation across multiple spectral bands simultaneously, providing sufficient information to identify targets with unknown emissivity while maintaining relatively simple device architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the development of high-quality multi-color and wide-spectrum detectors with improved efficiency, accuracy, and reduced complexity, enhancing target identification and spatial resolution.
Implementation Method 1
growing a gallium compound on a surface of a substrate to obtain a buffer layer substrate
Implementation Method 2
depositing silicon dioxide on a buffer layer surface of the buffer layer substrate to obtain a silicon dioxide film substrate
Implementation Method 3
growing a quantum well or superlattice on a strip growth layer surface of the strip growth layer substrate to obtain the detector material
Data Source
AI summary
Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.