Detector Modules With Silicon Wafer Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current imaging systems face challenges in integrating photosensor arrays and readout electronics due to increased complexity and cost of packaging designs, particularly in computed tomography (CT) systems, which result in reduced active detection area and compromised performance.
Innovation Solution
A silicon wafer structure with layers of different resistivities is used, where the photosensor device is fabricated on one side and the readout electronics on the opposite side, connected via conductive vias, to increase active detection area and reduce interconnection complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of imaging pixels and detector coverage are increased, then the imaging performance is improved, but the complexity of packaging design increases
Solution Approach 1:
The patent merges the photosensor array and readout electronics onto a single silicon wafer substrate, integrating both functional components into one unified structure. This eliminates the need for separate packaging of photosensors and readout circuits, thereby improving imaging performance while reducing packaging design complexity
Solution Approach 2:
The silicon wafer serves multiple functions simultaneously: it acts as the substrate for the photosensor array, provides the structural platform for readout electronics, and serves as the interconnection medium through conductive vias. This multi-functionality reduces the number of separate components and simplifies the overall packaging design
2Ease of manufacture
If complex ceramic substrates are used for packaging, then the integration of photosensor array and readout electronics is achieved, but the interconnection yield and reliability decrease
Solution Approach 1:
By merging the photosensor array and readout electronics onto the same silicon wafer, the patent eliminates the need for complex interconnections between separate ceramic packages. The direct integration on silicon reduces the number of interconnection points, thereby improving yield and reliability
Solution Approach 2:
The patent uses standard semiconductor fabrication processes to create the interconnections on silicon, copying the proven manufacturing techniques from the semiconductor industry. This approach ensures high interconnection yield and reliability by leveraging the mature process control and quality assurance of semiconductor manufacturing
3Device complexity
If photosensor array and readout electronics are integrated on the same side of silicon wafer, then the packaging complexity is reduced, but the active detection area is lost
Solution Approach 1:
The patent transitions from two-dimensional integration (same side) to three-dimensional integration by placing the photosensor array on one side of the silicon wafer and the readout electronics on the opposite side. This dimensional change allows both components to occupy the full surface area of the wafer without overlapping, maximizing the active detection area while maintaining low packaging complexity
Solution Approach 2:
The silicon wafer is segmented into two functional sides: one side dedicated to the photosensor array for light detection and the other side to the readout electronics for signal processing. This segmentation allows each component to utilize the entire wafer surface area, preventing loss of active detection area while achieving integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the active detection area, reduces thermal management requirements, and allows for a finer pitch detector, improving imaging system performance and reliability while minimizing packaging complexity and costs.
Implementation Method 1
a first high resistivity layer formed over a substrate layer, wherein the high resistivity layer has a resistivity greater than 1000 ohm-cm
Data Source
AI summary
Detector modules and methods of manufacturing are provided. One detector module includes a detector having a silicon wafer structure formed from a first layer having a first resistivity and a second layer having a second resistivity, wherein the first resistivity is greater than the second resistivity. The detector further includes a photosensor device provided with the first layer on a first side of the silicon wafer and one or more readout electronics provided with the second layer on a second side of the silicon wafer, with the first side being a different side than the second side.