Deuterated Silicon Oxide Cladding for Low-Loss Optical Waveguides

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Solution Overview

Problem

The challenge in fabricating optical integrated devices is the need for improved heat resistance and reduced loss in cladding films, especially when integrating multiple devices on the same substrate, where conventional techniques fail to maintain high-quality cladding films with low propagation loss.

Innovation Solution

The use of silicon oxide cladding materials containing deuterium atoms, with a higher number of deuterium atoms than hydrogen atoms, formed through plasma CVD methods using deuterated silane and oxygen as source gases, to create a low-loss optical waveguide structure with multiple cladding layers covering the core, which includes materials like silicon, silicon oxide, and silicon nitride.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If low-temperature film formation is used to improve heat resistance in integrated devices, then heat resistance is improved, but propagation loss increases

Engineering Contradiction:
Improveheat resistanceVSAvoidpropagation loss
Core Design Contradiction:
TemperatureVSLoss of energy

Solution Approach 1:

The patent changes the chemical composition parameters of the cladding film by incorporating deuterium atoms into the silicon oxide structure. This compositional parameter change allows the film to be formed at low temperatures while maintaining low propagation loss, resolving the contradiction between heat resistance improvement and loss reduction.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite material structure by forming a cladding film that combines silicon oxide with deuterium atoms. This composite approach enables the film to exhibit both low-temperature formability and low optical loss characteristics, simultaneously addressing heat resistance and propagation loss requirements.

Inventive Principle:
Principle #40Composite materials

2Productivity

If multiple devices are integrated on the same substrate to reduce size and cost, then device integration is improved, but heat resistance deteriorates

Engineering Contradiction:
Improvedevice integrationVSAvoidheat resistance
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent modifies the chemical parameters of the cladding film by introducing deuterium atoms, which enables low-temperature film formation. This allows multiple devices to be integrated on the same substrate without heat-related damage, achieving high device integration while maintaining heat resistance.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If conventional cladding materials are used to simplify manufacturing, then ease of manufacture is improved, but propagation loss increases

Engineering Contradiction:
Improveease of manufactureVSAvoidpropagation loss
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The patent changes the material composition by incorporating deuterium atoms into the silicon oxide cladding film. This parameter change enables the material to be deposited at low temperatures using conventional plasma CVD techniques, maintaining ease of manufacture while achieving low propagation loss.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces conventional thermal CVD or high-temperature deposition methods with plasma-enhanced CVD using deuterated silane. This substitution allows low-temperature film formation with improved optical characteristics while maintaining manufacturing simplicity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in optical integrated devices with excellent optical characteristics and reduced propagation loss, enabling efficient light transmission and integration of multiple devices on a single substrate without significant heat-related issues.

Implementation Method 1

formed through plasma CVD methods using deuterated silane and oxygen as source gases

Methodology Applied
Scientific EffectPlasma CVD: Plasma Enhanced Chemical Vapour Deposition

Data Source

PatentUS11415747B2Optical integrated device and production method therefor
Publication Date: 2022.08.16 NIPPON TELEGRAPH & TELEPHONE CORP
  • US11415747B2 patent drawing
  • US11415747B2 patent drawing
  • US11415747B2 patent drawing

AI summary

Included are an optical waveguide including a first cladding layer formed on a substrate; a core formed on the first cladding layer; and a second cladding layer formed on the first cladding layer so as to cover the core. At least one of the first cladding layer and the second cladding layer is composed of a cladding material of silicon oxide containing deuterium atoms. The number of hydrogen atoms contained in the cladding material is smaller than the number of the deuterium atoms contained in the cladding material.