Deuterium Diffusion Structure for Reducing Silicon Substrate Defects
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Solution Overview
Problem
The down-scaling of semiconductor devices leads to issues such as threshold voltage changes and leakage currents due to dangling bonds on the surface of silicon substrates, which are not effectively addressed by existing technologies.
Innovation Solution
A method involving deuterium implantation and diffusion through a deuterium exchange structure, utilizing a porous metal plate and hydrogen ion exchange membrane, to form silicon-deuterium bonds and reduce substrate defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If deuterium exchange structure is bonded to the second surface of the substrate, then deuterium diffusion into the substrate is enhanced, but device complexity increases
Solution Approach 1:
The deuterium exchange structure is segmented into a porous metal plate and a hydrogen ion exchange membrane, allowing independent optimization of each component's function while maintaining overall effectiveness in deuterium diffusion
Solution Approach 2:
The hydrogen ion exchange membrane acts as an intermediary between the plasma processing step and the substrate, selectively facilitating deuterium ion transport while blocking other species, thus enhancing deuterium diffusion efficiency
2Quantity of substance
If deuterium is implanted using plasma processing, then deuterium content in the substrate increases, but manufacturing process complexity increases
Solution Approach 1:
The deuterium exchange structure is pre-loaded with deuterium through plasma processing before the actual diffusion step, separating the deuterium loading and diffusion operations into distinct preliminary and main phases
Solution Approach 2:
The hydrogen ion exchange membrane undergoes parameter changes in response to plasma exposure, transforming from a neutral state to a deuterium-loaded state, enabling controlled deuterium release during subsequent heating
3Speed
If voltage is applied to the bias pad, then deuterium diffusion into the substrate is accelerated, but energy consumption increases
Solution Approach 1:
The voltage application to the bias pad is implemented as a periodic or pulsed action rather than continuous, allowing deuterium diffusion to occur in controlled intervals and reducing overall energy consumption
Solution Approach 2:
The thermal diffusion process is supplemented or replaced by an electric field-driven mechanism through bias pad voltage application, enabling more efficient deuterium transport with lower energy input compared to purely thermal processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces threshold voltage changes and leakage currents in transistors by diffusing deuterium into the substrate, enhancing electrical performance and preventing chip failures.
Implementation Method 1
bonding a deuterium exchange structure to the second surface of the substrate, the deuterium exchange structure including a porous metal plate and a hydrogen ion exchange membrane on a top surface of the porous metal plate
Implementation Method 2
diffusing the deuterium from the deuterium exchange structure into the substrate through the second surface of the substrate
Implementation Method 3
implanting deuterium into the deuterium exchange structure using plasma processing
Implementation Method 4
implanting deuterium into the deuterium exchange structure using plasma processing
Implementation Method 5
deuterium exchange structure including a porous metal plate and a hydrogen ion exchange membrane on a top surface of the porous metal plate
Data Source
AI summary
A method of manufacturing a semiconductor device includes preparing a substrate including cell regions and a scribe lane region, forming circuit blocks in the cell regions of the substrate, the substrate including a first surface and a second surface, forming a bias pad on the first surface of the substrate, such that the bias pad is in the scribe lane region of the substrate, bonding a deuterium exchange structure to the second surface of the substrate, implanting deuterium into the deuterium exchange structure using plasma processing, and applying a first voltage to the bias pad, such that the deuterium is diffused from the deuterium exchange structure into the substrate through the second surface of the substrate.