Semiconductor Radical Oxidation Using Deuterium-Oxygen Plasma
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Solution Overview
Problem
Existing methods for radical oxidation in semiconductor manufacturing are inefficient, leading to suboptimal film formation rates and step coverage of oxide films.
Innovation Solution
The use of a plasma generated by a treatment gas comprising a hydrogen isotope gas and oxygen gas for radical oxidation in a substrate treatment apparatus, which includes controlling temperature, pressure, and flow rate ratios to enhance film formation efficiency and step coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional hydrogen and oxygen gas plasma is used for radical oxidation, then the process is simple and well-established, but the film formation rate and step coverage are suboptimal
Solution Approach 1:
The patent changes the chemical composition parameter of the treatment gas from conventional hydrogen-oxygen mixture to deuterium-oxygen mixture. This parameter change fundamentally alters the plasma chemistry, enabling higher film formation rates and improved step coverage through enhanced radical generation efficiency and different reaction kinetics compared to traditional hydrogen-based plasma
Solution Approach 2:
The patent employs a composite gas mixture of deuterium and oxygen in specific ratios (deuterium: 5-50 sccm, oxygen: 50-95 sccm) to achieve synergistic effects. The composite nature of this gas mixture allows optimization of both film formation rate and step coverage by balancing the radical-generating deuterium component with the oxygen component that provides the oxidation capability
2Productivity
If hydrogen isotope gas is used in the treatment gas, then film formation rate and step coverage improve, but the device complexity and operational complexity increase
Solution Approach 1:
The patent modifies the gas flow rate parameters within specific ranges (deuterium: 5-50 sccm, oxygen: 50-95 sccm) to optimize the balance between film formation rate and step coverage. These parameter adjustments allow the system to achieve superior performance without requiring fundamental changes to the plasma generation or gas delivery infrastructure
Solution Approach 2:
The deuterium gas serves as an intermediary substance that enhances the plasma chemistry without requiring direct contact or modification of the substrate. By introducing deuterium as a mediator in the gas phase, the system achieves improved oxidation efficiency and film quality while maintaining compatibility with existing semiconductor manufacturing equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method results in improved film formation rates and step coverage of oxide films, outperforming traditional methods using hydrogen and oxygen gas plasmas, particularly within specific flow rate ratio ranges.
Implementation Method 1
radically oxidizing a first film by using a plasma generated by a treatment gas including a hydrogen isotope gas
Implementation Method 2
the deposited predetermined film is radically oxidized
Data Source
AI summary
According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method comprises radically oxidizing a first film by using a plasma generated by a treatment gas including a hydrogen isotope gas.