Developer Particle Control for Semiconductor Pattern Formation

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Solution Overview

Problem

Current pattern formation methods in semiconductor production and other photoapplication lithography processes face challenges in achieving low defect density, particularly due to particle contamination from developers used in negative patterning methods, which can lead to increased defect density due to hydrophilic patterns attracting developer particles.

Innovation Solution

A method involving the use of a developer and rinse liquid with particle densities of 30 particles/ml or less, filtered and maintained in clean environments, and containing specific organic solvents like ketones, esters, and alcohols, to minimize particle adherence and enhance pattern quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a developer containing organic solvent is used for negative patterning, then the pattern formation capability is improved, but the particle contamination increases leading to higher defect density

Engineering Contradiction:
Improvepattern formation capabilityVSAvoidparticle contamination
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the physical-chemical parameters of the developer by strictly controlling particle density (reducing to 30 particles/ml or less) and selecting specific organic solvents with controlled water content (5-50 mass%). This parameter optimization allows the developer to maintain effective pattern formation while minimizing particle contamination that causes defects.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality control by specifying different requirements for different components: the developer requires particle density of 30 particles/ml or less, the rinse liquid requires particle density of 10 particles/ml or less, and specific organic solvents are selected based on their chemical properties. This localized optimization of each component's quality ensures overall pattern formation success while minimizing defects.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If negative patterning method is employed to achieve various pattern configurations, then the pattern diversity is improved, but the defect density increases due to hydrophilic patterns attracting developer particles

Engineering Contradiction:
Improvepattern configuration diversityVSAvoiddefect density
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent converts the harmful effect of hydrophilic patterns attracting particles into a benefit by using a dual-development approach: first developing with organic solvent-based developer, then rinsing with water-based rinse liquid. The hydrophilic patterns that would normally attract and hold developer particles are instead effectively rinsed by the water-based liquid, removing the particles and preventing defects.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent introduces water as an intermediary substance in the form of a rinse liquid that mediates between the hydrophilic pattern and the environment. The rinse liquid containing water (50-95 mass%) acts as a mediator to remove developer particles from hydrophilic patterns without causing damage, thus converting the problematic hydrophilicity into an advantage for particle removal.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces defect density by minimizing particle contamination, improving pattern quality and uniformity, and allowing for more precise control over the development process.

Implementation Method 1

developing the exposed film with a developer containing a first organic solvent

Methodology Applied
Scientific EffectSolvation: Solvation

Data Source

PatentUS8663907B2Method of forming pattern
Publication Date: 2014.03.04 FUJIFILM CORP
  • US8663907B2 patent drawing
  • US8663907B2 patent drawing
  • US8663907B2 patent drawing

AI summary

Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.