Developer Composition for Ultrafine Resist Pattern Formation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current resist pattern forming methods struggle to achieve finer patterns, particularly with line widths of 25 to 50 nm, due to limitations in solubility and resolving power when using electron beams or extreme ultraviolet light sources.
Innovation Solution
A resist pattern forming method utilizing a developer containing a specific basic compound and tetrabutylammonium hydroxide, with concentrations between 2.5% to 2.8% by mass, to enhance the solubility of the resist material and improve resolving power and lithography margins.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional developers are used for resist pattern formation, then the development process can be completed, but the solubility of the resist material is insufficient and the resolving power is limited for ultrafine patterns
Solution Approach 1:
The patent changes the chemical composition parameters of the developer by incorporating specific basic compounds (Formula 1) and tetrabutylammonium hydroxide at controlled concentrations (2.5-2.8% by mass). This parameter modification enhances the solubility of the resist material in the developer, enabling effective development of ultrafine patterns with improved resolving power while maintaining pattern fidelity and lithography margins
Solution Approach 2:
The patent creates a composite developer system by combining multiple basic compounds (Formula 1) with tetrabutylammonium hydroxide. This composite formulation synergistically improves the solubility characteristics and resolving power, allowing the developer to effectively process resist materials for ultrafine patterns that conventional single-component developers cannot achieve
2Length of moving object
If the wavelength of exposure light source is shortened to form finer patterns, then the pattern fineness is improved, but the solubility and lithography margin deteriorate
Solution Approach 1:
The patent compensates for the reduced lithography margin caused by short-wavelength exposure by modifying the developer's chemical composition. The specific basic compounds and tetrabutylammonium hydroxide enhance resist material solubility, which improves pattern resolution and restores lithography margins even when using electron beams or extreme ultraviolet light sources for ultrafine pattern formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively forms high-resolution resist patterns with improved lithography margins, especially for ultrafine patterns with line widths of 25 to 50 nm, using electron beam or EUV exposure devices.
Implementation Method 1
the use of a specific developer increases the solubility of a resist material in the developer and improves resolving power or lithography margin
Data Source
AI summary
A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass:in which R1 to R4 each independently represent a linear or branched alkyl group, and the total number of carbon atoms contained in each of the alkyl groups represented by R1 to R4 is 4 to 15.