Developing Solution Film Thinning for Semiconductor Lithography
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Solution Overview
Problem
Existing developing methods for semiconductor wafers with low sensitivity resist films require longer processing times and increased solution consumption due to reduced developing solution reactivity from components dissolved during the process, leading to inefficiencies in the photolithography process.
Innovation Solution
A developing method that forms a developing solution film on a substrate, thins it by discharging gas onto the film, and supplies new solution at an upstream position, maintaining high reactivity by alternately pushing out the reduced reactivity solution, thereby reducing processing time and solution consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the developing solution is supplied continuously onto the substrate to develop low sensitivity resist films, then the processing time can be extended to ensure complete development, but the concentration of the developing solution decreases due to components dissolved from the resist film, reducing reactivity and requiring even longer processing time
Solution Approach 1:
The patent applies periodic action by repeatedly alternating between supplying new developing solution and removing the used solution. The nozzle moves back and forth across the substrate, supplying fresh developing solution at regular intervals while removing spent solution, creating a periodic renewal cycle that maintains high reactivity throughout the development process without requiring excessively long processing times
Solution Approach 2:
The patent extracts the harmful used developing solution containing dissolved resist film components from the substrate surface. By using a nozzle to remove the spent solution and replace it with fresh developing solution, the harmful accumulated components are continuously extracted, preventing concentration degradation and maintaining effective reactivity throughout the development process
2Quantity of substance
If the stationary developing method is used to process low sensitivity resist films, then the developing solution can accumulate on the substrate, but the concentration decreases due to dissolved components, diminishing reactivity and increasing processing time
Solution Approach 1:
The patent discards the used developing solution that has lost its reactivity due to dissolved resist components. The nozzle system removes the spent solution from the substrate surface and replaces it with fresh developing solution, effectively discarding the degraded solution and recovering the development process with renewed high-reactivity solution, thereby maintaining consistent reactivity throughout processing
Solution Approach 2:
The patent ensures continuity of useful action by continuously supplying fresh developing solution to the substrate surface throughout the development process. The repeated nozzle movements maintain an uninterrupted supply of high-reactivity developing solution, preventing the accumulation of dissolved components that would otherwise diminish reactivity and ensuring the development action remains effective throughout the entire process
3Shape
If the rotational developing method is used for low sensitivity resist films, then a liquid film is formed through centrifugal force, but the processing time and solution consumption increase
Solution Approach 1:
The patent uses pneumatic principles by employing a gas flow (such as nitrogen or air) to blow the used developing solution off the substrate surface. The gas flow creates a hydraulic-like effect that rapidly removes spent solution without requiring mechanical rotation or complex liquid film formation mechanisms, thereby achieving efficient solution replacement with reduced processing time and improved productivity
Solution Approach 2:
The patent applies the skipping principle by rapidly moving the nozzle back and forth across the substrate surface in quick successive passes. This rushing through the development process with rapid nozzle movements allows fresh developing solution to be supplied and spent solution to be removed quickly, significantly reducing processing time and improving overall productivity compared to slower rotational methods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables an efficient developing process with high reactivity, shortening processing time and reducing solution consumption for both low sensitivity resist films and EUV resist films, while maintaining CD uniformity across the wafer surface.
Implementation Method 1
discharging a gas onto a surface of the developing solution film
Data Source
AI summary
A developing method can perform a developing process on a resist film that is exposed to light. The developing method includes forming a developing solution film by supplying a developing solution onto a surface of a substrate having thereon a resist film that is exposed to light; thinning the developing solution film by pushing out the developing solution containing components dissolved from the resist film; and supplying a new developing solution onto the thinned developing solution film.