Developing Treatment Method for Semiconductor Resist Pattern Collapse
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to fine and high-aspect-ratio resist patterns, where cleaning solutions often remain between patterns, causing pattern collapse and defects, even when using high-water-repellency resists, and existing techniques fail to effectively address these issues.
Innovation Solution
A developing treatment method involving a pattern forming step with a developing solution, a coating step with an aqueous solution of a water-soluble polymer, and a rinse step using a surfactant-containing rinse solution to suppress pattern collapse and defects, with a pH of 3 to 6 for the aqueous solution, and a control unit to manage the treatment process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a cleaning solution is used to remove development products from the wafer, then the cleaning effect is improved, but the cleaning solution remains between fine patterns causing pattern collapse
Solution Approach 1:
A surfactant is introduced as an intermediary substance in the cleaning solution to modify its interaction with the resist patterns. The surfactant reduces surface tension and enables effective cleaning while preventing capillary action that would cause pattern collapse, thus resolving the contradiction between cleaning effectiveness and pattern integrity
Solution Approach 2:
The cleaning solution's chemical parameters are modified by adjusting pH to 3-6 and adding surfactants. These parameter changes alter the solution's surface tension and cleaning mechanism, allowing it to remove development products without penetrating into and collapsing fine patterns
2Productivity
If the resist pattern is made finer to achieve miniaturization, then the device density is improved, but the pattern becomes more susceptible to collapse from remaining cleaning solution
Solution Approach 1:
The surfactant is pre-added to the cleaning solution before contact with the wafer. This preliminary preparation ensures the solution has optimal surface tension properties from the start, preventing capillary intrusion into fine patterns before cleaning begins, thus protecting pattern stability while enabling fine feature processing
3Manufacturing precision
If a water-soluble polymer coating is applied to improve cleaning, then the contact angle is reduced, but the pH control is critical to prevent pattern damage
Solution Approach 1:
The pH of the aqueous solution is precisely controlled within the 3-6 range. This parameter control ensures the water-soluble polymer achieves optimal contact angle reduction without excessive acidity that could damage the resist patterns, balancing cleaning effectiveness with pattern protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method prevents cleaning solution and development product residue between patterns, thereby suppressing pattern collapse and achieving finer, defect-free resist patterns, with improved collapse limits and reduced contact angles, enhancing the precision and quality of the resist patterns.
Implementation Method 1
a contact angle between the cleaning solution used at the second half step and the resist surface is increased to 60 to 120°
Implementation Method 2
a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer
Data Source
AI summary
A developing treatment method performs a developing treatment on a resist film on a substrate. The method includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.