Diagonal Contact Layout for Semiconductor Integration Density
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Solution Overview
Problem
Semiconductor device design faces challenges in maintaining optimal margins between contact patterns under stringent design rule constraints, particularly with the miniaturization of semiconductor devices, where ensuring sufficient distance to prevent short circuits is crucial.
Innovation Solution
A method for fabricating semiconductor devices involving the formation of specific contact patterns, including first to fourth contacts and a fifth contact that diagonally traverses a quadrangle defined by these contacts, to maximize the distance and prevent short circuits while adhering to design rules, using a diagonal shape for the fifth contact that overlaps with certain contacts but not others.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If contact patterns are placed closer together to increase integration density, then productivity and device functionality improve, but the risk of short circuits increases and manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The patent introduces a diagonal contact pattern orientation (at 45 degrees to the substrate edges) instead of conventional horizontal/vertical arrangements. This dimensional change in pattern orientation allows contacts to be positioned more closely in the horizontal and vertical directions while maintaining adequate diagonal spacing, thereby increasing integration density without compromising manufacturing precision or short-circuit prevention
Solution Approach 2:
The patent employs asymmetric spacing arrangements where diagonal contacts are positioned at non-uniform intervals relative to each other, breaking the conventional symmetric grid layout. This asymmetric positioning optimizes the margin distribution between contacts, allowing tighter packing in certain directions while maintaining sufficient clearance in others, thus resolving the contradiction between high integration density and manufacturing precision
2Reliability
If minimum distance margins are increased to prevent short circuits, then reliability improves, but the area occupied by contact patterns increases reducing integration density
Solution Approach 1:
By rotating the contact pattern orientation to 45 degrees diagonally across the substrate, the patent effectively utilizes the diagonal space dimension that is underutilized in conventional orthogonal layouts. This allows the minimum safety margin to be maintained along the diagonal direction while reducing the horizontal and vertical spacing requirements, thereby preventing short circuits without sacrificing integration density
Solution Approach 2:
The patent employs circular contact patterns instead of square or rectangular shapes. The circular geometry provides uniform spacing in all directions from the contact center, optimizing the margin distribution. This curved shape allows for more efficient space utilization compared to angular shapes, maintaining reliable clearance zones while maximizing the number of contacts that can be packed into the available area
Data Source
AI summary
Provided are a semiconductor device and a fabricating method thereof. The fabricating method includes forming first to fourth fins, each extending in a first direction, to be spaced apart in a second direction intersecting the first direction, forming first and second gate lines, each extending in the second direction, on the first to fourth fins to be spaced apart in the first direction, forming a first contact on the first gate line between the first and second fins, forming a second contact on the first gate line between the third and fourth fins, forming a third contact on the second gate line between the first and second fins, forming a fourth contact on the second gate line between the third and fourth fins and forming a fifth contact on the first to fourth contacts so as to overlap with the second contact and the third contact and so as not to overlap with the first contact and the fourth contact, wherein the fifth contact is arranged to diagonally traverse a quadrangle defined by the first to fourth contacts.