Diagonal Via Opening Patterns for Semiconductor Reticle Resolution

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Solution Overview

Problem

The miniaturization of semiconductor devices leads to increased wiring density, making it difficult to form vias effectively due to the proximity of via opening patterns, resulting in via deformation and shorts, which lowers the yield and reliability of semiconductor devices.

Innovation Solution

A reticle with via opening patterns arranged diagonally to increase the minimum distance between neighboring via opening patterns, allowing for improved resolution and preventing via deformation and shorts, while maintaining the degree of integration of vias.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the degree of integration is increased by miniaturization of elements, then wiring density is improved, but via formation becomes difficult due to insufficient resolution

Engineering Contradiction:
Improvewiring densityVSAvoidvia formation precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent rotates the via opening patterns by 45 degrees relative to the wiring directions, changing the spatial orientation dimension. This rotation transforms the minimum distance calculation from axial alignment to diagonal spacing, effectively increasing the resolvable pitch without changing the physical via size or density

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent changes the angular parameter of via opening pattern orientation from 0 degrees (parallel to wirings) to 45 degrees (diagonal to wirings). This parameter change exploits the optical resolution characteristics to achieve better via formation while maintaining the same via density and wiring layout

Inventive Principle:
Principle #35Parameter changes

2Productivity

If via opening patterns are arranged closely to increase via density, then productivity is improved, but optical resolution deteriorates causing via deformation and shorts

Engineering Contradiction:
Improvevia densityVSAvoidoptical resolution
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

The patent introduces a rotational dimension to the via opening pattern arrangement, positioning them at 45 degrees to the wiring directions. This dimensional change maximizes the minimum distance between adjacent vias in the optical field, improving resolution while maintaining high via density in the physical layout

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If via opening patterns are rotated diagonally to increase minimum distance, then via formation resolution is improved, but device area increases

Engineering Contradiction:
Improvevia formation resolutionVSAvoiddevice area
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The patent changes only the angular parameter of via opening pattern orientation without altering the physical via dimensions, wiring pitch, or overall device footprint. The diagonal arrangement optimizes the use of existing space by exploiting the optical resolution limit, achieving better via formation without expanding the device area

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the resolution of via formation, prevents deformation and shorts, and improves the yield and reliability of semiconductor devices by increasing the distance between via opening patterns without lowering the degree of integration.

Implementation Method 1

an optical interference phenomenon is used. By using an optical interference effect between the via patterns or the wiring patterns, an effective contrast ratio can be increased

Methodology Applied
Scientific EffectOptical interference: Interference

Implementation Method 2

When the distance between the via opening patterns is smaller than the light wavelength used for the light exposure, diffracted waves come closer to each other

Methodology Applied
Scientific EffectDiffraction: Diffraction

Data Source

PatentUS7981574B2Reticle, and method of laying out wirings and vias
Publication Date: 2011.07.19 RENESAS ELECTRONICS CORP
  • US7981574B2 patent drawing
  • US7981574B2 patent drawing
  • US7981574B2 patent drawing

AI summary

Provided is a reticle used for forming a plurality of vias for connecting first wirings provided in a first wiring layer and second wirings provided in a second wiring layer formed above the first wiring layer. The first wirings and the second wirings are provided along one of a first direction and a second direction, and the first direction and the second direction perpendicularly cross each other. The reticle includes a plurality of via opening patterns for forming the plurality of vias. Each of the plurality of via opening patterns has a rectangular shape, and is arranged to cause each side of each of the via opening patterns to be diagonal with respect to the first direction and the second direction.