Diamond Heat Spreader Bonding via Amorphous Metal Layer
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Solution Overview
Problem
The high rigidity of diamond substrates in semiconductor devices leads to gaps with semiconductor substrates like SiC, reducing bonding strength and increasing interface thermal resistance, which hampers effective heat dissipation.
Innovation Solution
Incorporating an amorphous region on the substrate surface and a metal layer with low rigidity, such as Ti or Ta, between the semiconductor chip and a diamond heat transfer body, allowing for strong bonding and efficient heat dissipation by minimizing gaps and interface thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If diamond is used as a heat transfer body due to its high thermal conductivity, then heat dissipation is enhanced, but gaps are formed between the diamond and semiconductor substrate due to diamond's extremely high rigidity, reducing bonding strength and increasing interface thermal resistance
Solution Approach 1:
A metal layer is introduced as an intermediary between the diamond heat transfer body and the semiconductor substrate. This metal layer has intermediate rigidity between diamond and the substrate, enabling it to deform and fill gaps while maintaining strong bonding with both surfaces, thus resolving the bonding strength issue without compromising the high thermal conductivity of diamond
Solution Approach 2:
The rigidity parameter is modified by introducing a metal layer with intermediate mechanical properties. The metal layer's rigidity is specifically chosen to be lower than diamond but higher than the semiconductor substrate, allowing controlled deformation to eliminate gaps while maintaining structural integrity and bonding strength
2Temperature
If diamond is used as a heat transfer body, then heat dissipation is enhanced, but gaps are formed between the diamond and semiconductor substrate, increasing interface thermal resistance
Solution Approach 1:
The metal layer acts as a thermal intermediary that ensures continuous heat flow paths between the diamond and semiconductor substrate. By eliminating gaps through its deformable nature, it reduces thermal resistance at the interface while preserving the high thermal conductivity advantage of diamond
Solution Approach 2:
The thermal contact resistance parameter is reduced by changing the mechanical compliance of the bonding interface. The metal layer's ability to deform allows it to conform to surface irregularities, creating intimate thermal contact and minimizing energy loss through the interface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances bonding strength and reduces interface thermal resistance, enabling efficient heat transfer from the semiconductor chip to the diamond heat transfer body, thereby improving heat dissipation in semiconductor devices.
Implementation Method 1
the amorphous region and the metal layer are bonded to each other
Implementation Method 2
a metal layer between the semiconductor chip and the heat transfer body... enabling efficient heat transfer from the semiconductor chip to the diamond heat transfer body
Implementation Method 3
heat transfer body made of diamond... diamond having high thermal conductivity in a heat spreader or a heat sink application is effective in enhancing heat dissipation
Data Source
AI summary
A semiconductor device includes a semiconductor chip including a substrate and an element region on the substrate, a heat transfer body made of diamond, and a metal layer between the semiconductor chip and the heat transfer body, wherein the substrate includes an amorphous region on a back surface thereof, the amorphous region and the metal layer are bonded to each other, and the metal layer and the heat transfer body are bonded to each other.