Diamond Spin-Defect Sensor with Bulk Charge Collection
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Solution Overview
Problem
Existing PDMR techniques for diamond sensors are limited by the need for spin defects to be located near the surface for charge carrier collection, which restricts the number of usable sensing centers and limits signal collection efficiency.
Innovation Solution
Incorporating electrically conducting regions within the bulk of the diamond material to collect charge carriers from spin defects, allowing for three-dimensional positional information and increased signal collection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If spin defects are located near the surface for charge carrier collection, then charge carrier collection efficiency is improved, but the volume of usable sensing centers is limited
Solution Approach 1:
The patent transitions from surface-limited charge collection to bulk volume charge collection by positioning electrodes within the diamond bulk and using electric field penetration to collect carriers from spin defects throughout the entire diamond volume, not just near the surface
Solution Approach 2:
The patent introduces an applied electric field as an intermediary mechanism to enhance charge carrier drift and mobility, enabling efficient collection of carriers generated deep within the bulk diamond material by the microwave pulse
2Volume of stationary object
If electric field penetration depth is increased to access bulk spin defects, then the volume of sensing centers is improved, but charge carrier mobility through the diamond lattice is reduced
Solution Approach 1:
The patent applies an electric field before and during the microwave pulse to pre-establish favorable conditions for charge carrier drift and mobility, ensuring that carriers generated throughout the bulk can be efficiently collected despite the depth from which they must travel
Solution Approach 2:
The patent changes the electrical parameter state of the diamond by applying an external electric field, which modifies the drift and mobility characteristics of charge carriers to enable efficient collection from bulk spin defects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances signal collection and sensitivity by enabling the use of bulk spin defects, overcoming limitations of surface-limited charge carrier collection.
Implementation Method 1
The NV - centre emits green photoluminescence at 532nm when excited by a laser at 532nm
Implementation Method 2
the detection of charge carriers generated by excited spin centres
Data Source
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Figure 5~6
AI summary
A sensor device formed of diamond material. The sensor device has a spin defect located in the diamond material, and an electrically conducting region located so as to be interactable with the spin defect. The electrically conducting region extends from an interior location of the diamond material to a surface of the diamond material. The electrically conducting region at the surface of the diamond material is arranged to connect to a detector, the detector configured to detect charge carriers excited from the at least one spin defect via the electrically conducting region. This allows the use of a higher volume of the diamond sensor than would be the case if one were limited to using spin defects close to the surface.