Diamond Composite Semiconductor Structure for High Power Density Cooling

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Solution Overview

Problem

The growing demand for high-performance semiconductor devices in 5G and AI applications leads to increased power consumption and thermal management challenges in data centers, where existing cooling methods are inefficient and limited by the heat dissipation capacity of traditional materials.

Innovation Solution

The development of diamond composite wafers with enhanced thermal conductivity and low thermal expansion coefficients, integrated with advanced packaging and cooling technologies such as direct-to-chip liquid cooling and liquid immersion cooling, to create advanced ICs and SiPs that can efficiently manage heat and power density.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If traditional cooling methods are used, then device structure is simple, but thermal management efficiency is insufficient

Engineering Contradiction:
Improvethermal management efficiencyVSAvoidcooling system complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent changes the thermal conductivity parameter of the substrate material from traditional organic laminate (low thermal conductivity) to diamond composite material (high thermal conductivity), achieving superior thermal management efficiency while maintaining structural simplicity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs diamond composite material as the substrate, combining diamond particles with a matrix material to create a composite structure that provides both high thermal conductivity and mechanical strength, resolving the contradiction between thermal performance and structural complexity

Inventive Principle:
Principle #40Composite materials

2Power

If power density is increased, then computing performance is improved, but heat dissipation capacity is exceeded

Engineering Contradiction:
Improvepower densityVSAvoidheat dissipation capacity
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent changes the thermal conductivity parameter of the substrate from conventional materials to diamond composite material with thermal conductivity exceeding 2000 W/m·K, enabling the system to handle higher power densities without exceeding heat dissipation capacity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The diamond composite substrate acts as an intermediary between the high-power-density IC and the cooling system, efficiently conducting heat away from the heat-generating components to maintain thermal balance

Inventive Principle:
Principle #24Intermediary (Mediator)

3Temperature

If traditional organic laminate substrates are used, then manufacturing is easy, but thermal conductivity is insufficient

Engineering Contradiction:
Improvethermal conductivityVSAvoidsubstrate manufacturing difficulty
Core Design Contradiction:
TemperatureVSEase of manufacture

Solution Approach 1:

The patent uses diamond composite material that combines diamond particles (providing high thermal conductivity) with a matrix material, achieving superior thermal performance while maintaining manufacturing feasibility through established composite material fabrication techniques

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent implements local quality by concentrating diamond particles in specific regions of the substrate where high thermal conductivity is most needed, optimizing thermal performance while controlling manufacturing complexity

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables significant improvements in thermal management and power efficiency, allowing for higher performance and density in semiconductor devices while addressing the limitations of traditional materials and cooling methods.

Implementation Method 1

a thermal conductivity of the first semiconductor substrate is smaller than that of the diamond block

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240047298A1Semiconductor structure
Publication Date: 2024.02.08 ND-HI TECH LAB INC
  • US20240047298A1 patent drawing
  • US20240047298A1 patent drawing
  • US20240047298A1 patent drawing

AI summary

A semiconductor structure includes a substrate and a first circuit containing composite block over the substrate. The first circuit containing composite block includes a through via therein and a re-distribution layer thereon. The first circuit containing composite block includes a semiconductor block and a diamond block.