Irradiated Diamond Conduction Paths for High-Power Microwave Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing technologies face challenges in fabricating high-power microwave and RF components using materials like diamond and silicon carbide due to overheating issues and the need for precise control of qubits for quantum computing applications.
Innovation Solution
The development of a device with conduction paths formed by irradiation techniques such as laser writing, neutron, ion, or electron implantation, capable of carrying electromagnetic waves and facilitating control of nitrogen-vacancy centers in diamond for quantum processing and consumer electronics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high-power operation is used to transmit signals, then transmission power is improved, but the component overheats
Solution Approach 1:
The patent changes the material parameter from conventional metals to diamond, which has fundamentally different thermal conductivity properties. This material substitution enables high-power operation by providing superior heat dissipation capability, directly resolving the overheating issue while maintaining high transmission power.
2Temperature
If diamond material is used for high thermal conductivity, then heat dissipation is improved, but fabrication capability deteriorates
Solution Approach 1:
The patent replaces conventional mechanical fabrication methods with ion implantation, a physical/chemical process. This substitution enables precise control of nitrogen-vacancy centers in diamond without relying on advanced mechanical machining or processing techniques, thereby overcoming the fabrication capability limitations of diamond.
Solution Approach 2:
The patent changes the fabrication approach from mechanical processing to ion implantation parameters control. By adjusting ion energy, dose, and pattern, precise placement of nitrogen-vacancy centers is achieved, transforming the fabrication challenge into a controllable physical process.
3Manufacturing precision
If laser-writing is used to place nitrogen-vacancy centers, then positioning precision is improved, but production scalability deteriorates
Solution Approach 1:
The patent extracts the nitrogen placement step from the laser-writing process and performs it separately via ion implantation. This separation allows parallel processing and batch fabrication, dramatically improving production scalability while maintaining the positioning precision achieved through ion beam patterning.
Solution Approach 2:
The patent performs preliminary ion implantation to create nitrogen distribution patterns before final annealing and vacancy formation. This preliminary action enables batch processing of multiple samples simultaneously, scaling production while preserving precise spatial control of nitrogen-vacancy centers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device enables efficient transmission of microwaves and RF waves at low temperatures, allowing for precise control of qubits and high-power operation in quantum computing and consumer electronics, while providing a platform for building diamond-based quantum computers.
Implementation Method 1
the at least one conduction path is able to carry electromagnetic waves having a frequency between 10 Hz and 300 GHz
Implementation Method 2
Laser-writing involves the use of an ultrafast laser to create vacancies in highly localised volumes within a solid
Implementation Method 3
The at least one conduction path may be formed by laser writing, neutron irradiation, ion implantation, electron irradiation, or atom implantation
Implementation Method 4
After laser writing in diamond, the diamond can be annealed at, for example, 1000° C., or chosen sites excited with a second laser pulse, so that vacancies migrate through the lattice
Data Source
AI summary
A device is disclosed. The device includes a body of material, at least one conduction path running through the body of material and formed by irradiation of a region of the material defining the at least one conduction path. The at least one conduction path is able to carry electromagnetic waves having a frequency between 10 Hz and 300 GHz.