Diamond Crystal with Dislocation Regions for Semiconductor Use
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Solution Overview
Problem
Current diamond crystals for semiconductor applications are limited by their small size and presence of grain boundaries, which degrade electrical characteristics and restrict their usable area, while single crystal diamonds are too small for conventional semiconductor production lines due to their cubic shape and inferior orientational properties.
Innovation Solution
A diamond crystal with dislocation concentration regions and optimized intervals between them, eliminating grain boundaries and allowing for larger, high-orientational, bulk crystal formation with reduced Full Width at Half Maximum (FWHM) values, enabling larger sizes and versatile applications without grain boundaries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a diamond crystal is grown to a large size for semiconductor applications, then the area for semiconductor use increases, but grain boundaries appear which degrade electrical characteristics
Solution Approach 1:
The invention segments the crystal structure by introducing dislocation concentration regions at regular intervals (10-4000 nm) that act as boundaries between domains. These segmented domains maintain high orientational properties while the dislocation regions accommodate stress, preventing grain boundary formation and maintaining electrical characteristics across large areas.
Solution Approach 2:
The invention applies local quality by creating specific dislocation concentration regions with high dislocation density at intervals, while the domains between these regions maintain low dislocation density and high orientational property. This local differentiation allows large area growth without compromising overall electrical characteristics.
2Reliability
If a single crystal diamond is used to maintain high orientational property, then electrical characteristics are preserved, but the crystal size remains small (up to 5.0 mm side)
Solution Approach 1:
The invention divides the large crystal into multiple domains separated by dislocation concentration regions. Each domain maintains high orientational property like a single crystal, while the overall crystal can grow to large sizes (several inches) by combining multiple domains, thus resolving the size limitation of traditional single crystals.
Solution Approach 2:
The invention merges multiple domains with high orientational properties into a large crystal structure. By combining these domains through dislocation concentration regions, the crystal achieves both large size and preserved electrical characteristics.
3Reliability
If the interval between dislocation concentration regions is increased to reduce their number, then stress release is reduced, but warping increases and FWHM increases
Solution Approach 1:
The invention optimizes the interval parameter between dislocation concentration regions to a specific range (10-4000 nm). This parameter change balances stress release capability with warping control, achieving both stress accommodation and maintained orientational property (low FWHM).
Data Source
AI summary
As the diamond crystal, a diamond crystal in a bulk form including dislocation concentration regions is formed. An interval between each of the dislocation concentration regions is from 10 nm to 4000 nm. The crystal orientation of crystal main face at the surface of the diamond crystal is any one of (100), (111), or (110). An external shape of the diamond crystal in a surface direction is a rectangle, a circle, or a circle having an orientation flat plane. The rectangle is set to have a side length of not less than 8.0 mm. The circle is set to have a diameter of not less than 8.0 mm.