Single Crystal Diamond Growth via CVD Substrate Aspect Ratio
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Solution Overview
Problem
Existing methods for growing single crystal diamond material by chemical vapour deposition (CVD) are limited by the need for substrates with specific orthogonal dimensions, often resulting in inefficient use of available diamond substrates and suboptimal lateral growth due to the use of substrates with aspect ratios less than 1.3:1, which restricts the achievable area of grown diamond material.
Innovation Solution
A method involving a diamond substrate with a (001) major surface bounded by at least one edge, where the length of the edge exceeds any orthogonal dimension by a ratio of at least 1.3:1, allowing for homoepitaxial growth under CVD conditions that enables significant lateral expansion and full effective rotation of the growth surface, thereby increasing the diamond material's area beyond conventional limits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If substrates with aspect ratio less than 1.3:1 are used for CVD growth, then the substrate conforms to conventional dimensional requirements, but the lateral growth is suboptimal and the achievable area of grown diamond material is restricted
Solution Approach 1:
The invention changes the geometric parameter of the substrate by specifying an aspect ratio of at least 1.3:1, which is a specific parameter modification that enables improved lateral growth and achieves an area increase of at least 200% for the grown diamond material
Solution Approach 2:
The invention emphasizes lateral expansion in the horizontal dimension by using substrates with increased aspect ratio, thereby achieving significant area multiplication through dimensional optimization rather than simply increasing substrate size uniformly
2Productivity
If substrates with specific orthogonal dimensions are required, then the growth process follows conventional specifications, but the utilization of available diamond substrates becomes inefficient
Solution Approach 1:
The invention modifies the dimensional parameter requirements by adopting an aspect ratio of at least 1.3:1, which transforms irregularly shaped substrates that would normally be discarded into viable growth substrates, thereby improving utilization efficiency
Solution Approach 2:
The invention converts what would normally be considered defective or unusable substrates (those with irregular shapes or aspect ratios not meeting conventional specifications) into beneficial growth substrates by recognizing that their irregular dimensions actually promote superior lateral growth when the aspect ratio is at least 1.3:1
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the growth of diamond material with an area at least 200% larger than the starting substrate, utilizing irregularly shaped substrates that would otherwise be discarded, and results in diamond material with lower dislocation density, suitable for applications requiring high optical and electronic properties.
Implementation Method 1
growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions
Implementation Method 2
growing diamond material homoepitaxially on the (001) major surface
Implementation Method 3
energising the gases, and providing conditions so that a plasma of carbon is created on top of the existing diamond plate
Data Source
Figure 1
Figure 2a~2e
Figure 3~5
AI summary
A method of producing a grown single crystal diamond substrate comprising: (a) providing a first diamond substrate which presents a (001) major surface, which major surface is bounded by at least one <100> edge, the length of the said at least one <100> edge exceeding any dimension of the surface that is orthogonal to the said at least one <100> edge by a ratio of at least 1.3 : 1; and (b) growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions, the diamond material growing both normal to the major (001) surface, and laterally therefrom.