Diamond Semiconductor Doping for High-Quality N-Type Layers
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Solution Overview
Problem
The development of practical diamond-based semiconductors is limited by the difficulty in fabricating quality n-type layers, which is crucial for high power circuit elements and monolithic system level integration.
Innovation Solution
A method is developed to fabricate diamond layers by seeding a transparent substrate with nanocrystalline or ultrananocrystalline diamond, incorporating substitutional atoms, and modifying the diamond lattice structure through controlled ion implantation and rapid thermal annealing to introduce n-type characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional diamond fabrication methods are used, then diamond layers can be formed, but the quality of n-type layers is poor due to high concentration of vacancy created defects
Solution Approach 1:
The patent applies parameter changes by modifying the concentration of substitutional atoms (such as phosphorus, nitrogen, or sulfur) in the diamond lattice through controlled ion implantation. By adjusting the dose, energy, and type of dopant atoms, the electrical properties of diamond layers are transformed from intrinsic or p-type to n-type, resolving the contradiction between achieving high-quality n-type layers and minimizing vacancy defects. The method changes the chemical composition parameters to achieve desired electrical characteristics while maintaining structural integrity.
2Reliability
If substitutional atoms are incorporated to improve n-type characteristics, then electrical properties are enhanced, but the complexity of the fabrication process increases
Solution Approach 1:
The patent employs preliminary action by performing rapid thermal annealing immediately after ion implantation to activate the substitutional atoms and repair implantation damage. This preliminary treatment step ensures that the dopant atoms are properly incorporated into substitutional sites in the diamond lattice before subsequent processing steps. By addressing dopant activation and defect repair early in the process, the overall fabrication complexity is managed while achieving reliable n-type electrical properties.
3Ease of manufacture
If ion implantation is used to introduce substitutional atoms, then n-type diamond layers can be fabricated, but vacancy defects are created in the diamond lattice
Solution Approach 1:
The patent converts the harmful effect of vacancy creation during ion implantation into a beneficial outcome by using the same implantation process to introduce substitutional dopant atoms. The vacancies created by ion bombardment are subsequently filled by the dopant atoms during rapid thermal annealing, transforming the defects into useful substitutional sites that provide n-type electrical characteristics. This approach converts the harmful vacancy creation into a beneficial dopant incorporation mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of high-quality n-type diamond semiconductors with enhanced electrical properties, allowing for the creation of advanced semiconductor devices such as diodes, transistors, and integrated circuits with improved performance and stability.
Implementation Method 1
both the diamond layer and the transparent substrate modified to incorporate substitutional atoms
Implementation Method 2
both the diamond layer and the transparent substrate modified to incorporate substitutional atoms
Data Source
AI summary
Systems and methods for fabricating diamond films are described. One method includes chemically hardening a glass substrate. A nanocrystalline diamond layer may be deposited on the glass substrate via a CV D-based deposition process on at least a first side of the substrate. An ultrananocrystalline diamond layer may be deposited on at least the first side of the substrate.