Diamond Electrode Production via Silicon Substrate Etching

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Solution Overview

Problem

The existing methods for producing diamond electrodes are expensive and complex, particularly when using metal electrodes coated with a diamond layer, which risks metal contamination and requires precise, costly processing.

Innovation Solution

A method involving a silicon base body with etched depressions and predetermined breaking points, coated with diamond, allowing for cost-effective and precise production of diamond electrodes using optimized semiconductor technology processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If metal base material is used for diamond electrode, then electrical conductivity is improved, but risk of metal contamination increases and processing complexity increases

Engineering Contradiction:
Improveelectrical conductivityVSAvoidmetal contamination
Core Design Contradiction:
Use of energy by moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent replaces expensive metal base materials with silicon, which can be processed using standard semiconductor manufacturing techniques. The silicon base body is designed to be disposable or easily replaceable, eliminating the need for complex metal processing and reducing contamination risks.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The patent changes the base material parameter from metal to silicon, fundamentally altering the approach to electrical conductivity. Silicon provides sufficient conductivity for the application while enabling the use of成熟的 semiconductor processing techniques that are more precise and less contaminating.

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If metal base material is used for diamond electrode, then electrical conductivity is improved, but manufacturing complexity and cost increase

Engineering Contradiction:
Improveelectrical conductivityVSAvoidprocessing complexity
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The patent makes the silicon base body compatible with standard semiconductor manufacturing processes, allowing the same fabrication equipment and techniques used for semiconductor devices to be used for diamond electrode production. This universality simplifies manufacturing and reduces costs.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

By using silicon instead of metal, the base material becomes easier and cheaper to process using standard semiconductor techniques, reducing manufacturing complexity even if the base body is disposable.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Ease of manufacture

If silicon base body is used for diamond electrode, then manufacturing cost decreases and precision improves, but electrical conductivity is reduced

Engineering Contradiction:
Improvemanufacturing costVSAvoidelectrical conductivity
Core Design Contradiction:
Ease of manufactureVSUse of energy by moving object

Solution Approach 1:

The patent accepts silicon's lower conductivity compared to metal but compensates by optimizing the diamond coating properties and electrode design. The parameter change from metal to silicon enables cost-effective mass production while maintaining sufficient conductivity for the intended applications.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the production of diamond electrodes at a lower cost and with greater precision, eliminating metal contamination risks and simplifying the manufacturing process for mass production.

Implementation Method 1

the diamond coating applied to the outside of the base body is sufficient to transport the required electrical currents

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

The etching itself is advantageously carried out with a potassium lye (KOH)

Methodology Applied
Scientific EffectChemical etching: Ablation

Implementation Method 3

A silicon dioxide (SiO 2 ) adhesion layer, which is approximately 50 nm thick, is advantageously first applied to the base body made of silicon. It serves as an adhesion promoter for an insulation layer to be applied thereon

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentEP3303658B1Method for producing a diamond electrode and diamond electrode
Publication Date: 2023.05.03 CONDIAS
  • EP3303658B1 patent drawingFigure 1
  • EP3303658B1 patent drawingFigure 2
  • EP3303658B1 patent drawingFigure 3

AI summary

The invention relates to a method for producing a diamond electrode, which comprises the following steps: a) providing a main body (2) composed of silicon, the dimensions of which are greater than the dimensions of the diamond electrode (22) to be produced, b) etching at least one recess (10) into the surface of the main body (2), c) introducing predetermined breaking points (18) into the main body (2), d) coating the main body (2) with diamond, e) breaking the diamond electrode (22) out of the main body (2) along the predetermined breaking points (18).