Diamond-Substrate Nitride FET Layout for 3D Heat Dissipation
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Solution Overview
Problem
Conventional semiconductor devices using diamond substrates for heat dissipation are limited in the direction of heat dissipation, primarily along the film thickness, which can lead to insufficient suppression of temperature increases in the active region during high-power operation.
Innovation Solution
A semiconductor device with a diamond substrate featuring a recess in its upper surface, where a nitride semiconductor layer is disposed, and an electrode is positioned on the nitride semiconductor layer, with a source via hole extending through the diamond substrate to expose the source electrode, and a via metal covering the inner wall of the source via hole and the lower surface of the diamond substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If diamond is applied only to the interior of the via or only to the substrate, then the structure is simple, but heat dissipation is limited to the direction along the film thickness and temperature increase in the active region is not sufficiently suppressed
Solution Approach 1:
The patent transitions from one-dimensional heat dissipation (vertical direction only) to three-dimensional heat dissipation by forming diamond protrusions that extend laterally from the via interior. This allows heat to escape in multiple directions (upward, downward, and laterally) simultaneously, effectively suppressing temperature increase in the active region while maintaining structural simplicity.
Solution Approach 2:
The diamond protrusions are formed by extending the diamond material from the via interior outward, creating a nested structure where the via is integrated with the protrusions. This nested configuration enables the diamond structure to serve dual purposes: filling the via for electrical connection and providing lateral heat dissipation paths, thereby resolving the contradiction between structural simplicity and heat dissipation effectiveness.
2Loss of energy
If heat dissipation is limited to the direction along the film thickness, then the structure is simple, but the heat dissipation effect is insufficient for high-power operation
Solution Approach 1:
The invention adds lateral dimensions to the heat dissipation structure by forming diamond protrusions that extend from the via. This creates multiple heat dissipation pathways in three dimensions (vertical and lateral), significantly enhancing the overall heat dissipation effect for high-power operation without requiring a completely complex separate heat dissipation system.
Solution Approach 2:
The diamond structure serves multiple functions simultaneously: it provides electrical connection through the via, dissipates heat vertically through the substrate, and dissipates heat laterally through the protrusions. This multi-functional design enhances heat dissipation effectiveness without proportionally increasing structural complexity, as the same diamond material fulfills multiple roles.
3Temperature
If diamond is used to maximize heat dissipation effect, then heat dissipation performance is improved, but additional wiring is required which complicates the device structure
Solution Approach 1:
The diamond via and protrusions serve dual functions as both electrical connection pathways and heat dissipation structures. By integrating these two functions into a single diamond structure, the invention eliminates the need for separate wiring elements, thereby maintaining heat dissipation performance while avoiding additional wiring complexity.
Solution Approach 2:
The invention merges the electrical connection function and heat dissipation function into a single integrated diamond structure. The via and protrusions simultaneously conduct electricity and dissipate heat, combining what would traditionally require separate components into one unified structure, thus improving heat dissipation without adding wiring complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration allows for efficient heat dissipation from the nitride semiconductor layer to the sides and bottom of the diamond substrate, enhancing heat dissipation performance and maintaining high-frequency properties by eliminating the need for additional wiring, thereby suppressing temperature increases and improving high-frequency signal amplification.
Implementation Method 1
Diamond, which has the highest thermal conductivity of all the solid materials, is the optimum material for heat dissipation
Data Source
AI summary
It is an object of the present invention to provide a semiconductor device having high heat dissipation performance. A semiconductor device includes: a diamond substrate having a recess in an upper surface thereof; a nitride semiconductor layer disposed within the recess in the upper surface of the diamond substrate; and an electrode disposed on the nitride semiconductor layer, wherein the nitride semiconductor layer and the electrode constitute a field-effect transistor, the diamond substrate has a source via hole extending through a thickness of the diamond substrate to expose the source electrode, and the semiconductor device further includes a via metal covering an inner wall of the source via hole and a lower surface of the diamond substrate.