Diamond Heat Dissipation Plate for Heterogeneous Semiconductor Integration
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability and reducing fabrication costs while improving yield, particularly in integrating nitride semiconductors like gallium nitride with silicon-based devices.
Innovation Solution
A semiconductor device is fabricated using a heat dissipation plate with a flip-chip bonding method, where a silicon field effect transistor is integrated with a gallium nitride field effect transistor, utilizing a diamond heat dissipation plate for efficient thermal management and reducing thermal resistance, and a method involving sequential lamination and patterning of substrates to form conductive pads and electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If nitride semiconductors are integrated with silicon-based devices, then device functionality and performance are improved, but fabrication complexity and cost increase
Solution Approach 1:
The patent divides the semiconductor device into separate functional regions: a first region containing silicon-based devices and a second region containing nitride semiconductor devices. Each region can be fabricated using appropriate processes for its material system, then integrated through the heat dissipation plate structure. This segmentation allows independent optimization of each device type while achieving combined functionality.
Solution Approach 2:
The patent employs a heat dissipation plate made of diamond (a composite material with exceptional thermal conductivity) that interfaces with both silicon and gallium nitride substrates. This composite approach enables thermal management across heterogeneous material systems, facilitating the integration of different semiconductor technologies on a single device while maintaining各自 fabrication advantages.
2Ease of manufacture
If conventional bonding methods are used for integrating substrates, then manufacturing simplicity is maintained, but thermal resistance increases and reliability decreases
Solution Approach 1:
The patent fundamentally changes the thermal conduction parameter by introducing a diamond heat dissipation plate with ultra-high thermal conductivity. This parameter change enables efficient heat removal from both silicon and gallium nitride devices, achieving low thermal resistance while maintaining integration reliability. The diamond substrate transforms the thermal management capability of the entire device structure.
3Adaptability or versatility
If multiple different substrate materials are integrated, then device performance and application range are improved, but fabrication cost increases
Solution Approach 1:
The diamond heat dissipation plate serves multiple functions simultaneously: it acts as a thermal management solution for both silicon and gallium nitride devices, provides a mechanical support structure, enables electrical connections through conductive pathways, and facilitates the integration of heterogeneous device types. This multi-functionality reduces the need for separate components and processes, thereby controlling fabrication costs despite the advanced materials used.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the reliability and thermal management of the semiconductor device, improves signal transmission speed, and reduces fabrication costs by integrating silicon and gallium nitride transistors with a diamond heat dissipation plate, resulting in a highly integrated and cost-effective semiconductor device.
Implementation Method 1
utilizing a diamond heat dissipation plate for efficient thermal management and reducing thermal resistance
Implementation Method 2
the second element is bonded to the heat dissipation plate by a flip-chip bonding manner
Data Source
AI summary
A method for fabricating a semiconductor device includes sequentially laminating a separation layer and a first substrate layer on a sacrificial substrate, and forming a heat dissipation plate comprising a first region and a second region on the first substrate layer. The method further includes removing the sacrificial substrate and the separation layer, and patterning the first substrate layer to form a first substrate exposing the heat dissipation plate in the second region and contacting the heat dissipation plate in the first region, and forming a first element on the first substrate. The method still further includes forming a plurality of conductive pads disposed on the heat dissipation plate in the second region and a first line connecting at least one of the plurality of conductive pads to the first element, and forming a second element on the conductive pads in the second region.