Diamond Heat Spreader Structure for IC Surface Mismatch
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Solution Overview
Problem
High-performance semiconductor devices, such as CPUs, GPUs, and NPUs, face significant heat dissipation challenges due to their increasing integration and performance, which can lead to malfunction and reliability issues if not adequately addressed.
Innovation Solution
A heat spreader structure utilizing diamond with high thermal conductivity is integrated into the semiconductor device, where the diamond layer is formed on a silicon substrate with a recessed and protruding shape that matches the integrated circuit, allowing for efficient bonding and heat dissipation without damaging the integrated circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If diamond is grown directly on the integrated circuit to achieve high heat dissipation, then thermal conductivity is improved, but the integrated circuit is damaged due to high temperature and plasma requirements
Solution Approach 1:
The system is divided into separate components: the integrated circuit substrate and the diamond heat dissipation layer are formed independently and then bonded together. This segmentation allows the diamond to be grown under high temperature conditions without exposing the integrated circuit to damaging conditions, while still achieving effective heat dissipation when bonded.
Solution Approach 2:
The diamond layer is grown on a separate substrate before the integrated circuit is assembled. This preliminary action allows the diamond to be prepared under optimal high temperature conditions, and then the completed diamond-coated substrate is bonded to the integrated circuit, avoiding any exposure of the circuit to damaging conditions.
2Temperature
If diamond is bonded to the back surface of the semiconductor device to improve heat dissipation, then thermal conductivity is improved, but bonding difficulties arise due to surface irregularities
Solution Approach 1:
The diamond-coated substrate is processed to create local variations in surface topology (protrusions and recesses) that correspond to the integrated circuit's heat-generating regions. This local quality enhancement ensures optimal thermal contact at the bonding interface by allowing the diamond to conform to the circuit's surface irregularities.
Solution Approach 2:
The diamond-coated substrate acts as an intermediary component that bridges the thermal gap between the integrated circuit and the heat sink. The protrusions and recesses on the diamond substrate surface serve as a mechanical intermediary that ensures intimate contact while accommodating surface irregularities.
3Ease of manufacture
If a flat diamond layer is used for heat dissipation, then manufacturing is simplified, but contact with the integrated circuit is insufficient due to height variations
Solution Approach 1:
Instead of using a uniformly flat diamond layer, the invention introduces local variations in the diamond substrate surface (protrusions and recesses) that correspond to the height variations of the integrated circuit. This local quality modification maintains manufacturing feasibility while dramatically improving thermal contact efficiency at the bonding interface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively enhances heat dissipation efficiency by leveraging the high thermal conductivity of diamond, while also simplifying the production process to avoid damaging the integrated circuit, thus improving the reliability and performance of high-performance semiconductor devices.
Implementation Method 1
diamond having a high thermal conductivity as a heat dissipation material
Data Source
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AI summary
The present invention is a member 34 having a heat spreader structure including a substrate member 31 in which an integrated circuit portion 10 is formed, and a heat spreader structure portion 9 formed on the integrated circuit portion 10, in which the integrated circuit portion 10 forms a recessed and protruding shape, the heat spreader structure portion 9 is formed by either a diamond layer 6 with a protruding and recessed shape that fits the recessed and protruding shape of the integrated circuit portion 10 or by a silicon substrate 8 having a diamond layer 6 formed thereon where the silicon substrate 8 has a protruding and recessed shape that fits the recessed and protruding shape of the integrated circuit portion 10, and the protruding and recessed shape of the heat spreader structure portion 9 is fitted to the recessed and protruding shape of the integrated circuit portion 10 to bond the heat spreader structure portion 9 to the substrate member 31. This provides a more efficient heat dissipation structure.