Diamond Substrate Lateral Heat Dissipation for Semiconductor Devices
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Solution Overview
Problem
Conventional semiconductor devices using diamond for heat dissipation are limited to dissipating heat only in the thickness direction, which is insufficient for effectively reducing temperature increases in active regions, particularly during high-output operations.
Innovation Solution
A semiconductor device configuration featuring a diamond substrate with a nitride semiconductor layer formed in a recess on its surface, allowing diamond to contact both the lower and lateral surfaces of the nitride semiconductor layer, thereby enhancing heat dissipation in both downward and lateral directions, and incorporating an adhesion layer to improve material adhesion and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If diamond is provided only in a via or substrate to dissipate heat, then heat dissipation is provided in the thickness direction, but temperature increase in the active region cannot be sufficiently reduced
Solution Approach 1:
The patent extends heat dissipation from the thickness direction (vertical) to the lateral direction (horizontal) by forming diamond layers on the lateral surfaces of the nitride semiconductor layer. This dimensional expansion allows heat to be dissipated in multiple directions simultaneously, effectively reducing temperature increase in the active region that cannot be achieved by thickness-direction dissipation alone.
Solution Approach 2:
The patent applies diamond material selectively at critical heat generation locations: in the via region, on the upper surface, and on the lateral surfaces of the nitride semiconductor layer. This localized application of high heat conductivity material ensures that heat is dissipated from the most critical thermal zones, directly addressing the insufficient temperature reduction in the active region.
2Reliability
If diamond is used to provide high heat dissipation performance, then heat conductivity is improved, but the structure becomes more complex
Solution Approach 1:
The diamond layer formed on the lateral surface serves multiple functions: it provides heat dissipation from the side surface, acts as an adhesion layer between the nitride semiconductor and surrounding structures, and contributes to mechanical stability. This multi-functionality reduces the need for separate dedicated structures, thereby limiting the increase in overall device complexity.
Solution Approach 2:
The patent combines the heat dissipation function with the adhesion function by using diamond material that simultaneously provides thermal conduction and bonding between different layers. The diamond layer on the lateral surface merges thermal management and structural adhesion into a single integrated component, reducing the number of separate elements needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly suppresses temperature increases in semiconductor devices by providing high heat dissipation performance in multiple directions and simplifies the element-to-element isolation process, reducing the risk of cracks and fractures during manufacturing.
Implementation Method 1
diamond having high heat conductivity is formed to contact not only the lower surface but also the lateral surface of the nitride semiconductor layer
Data Source
AI summary
A semiconductor device includes a diamond substrate made of diamond, and a nitride semiconductor layer formed in a recess formed at an upper surface of the diamond substrate. The semiconductor device further includes at least one of: (A) the nitride semiconductor layer formed to be surrounded entirely by the upper surface of the diamond substrate in a plan view; (B) the diamond substrate in which the upper surface of the diamond substrate and an upper surface of the nitride semiconductor layer are located on the same plane; and (C) the diamond substrate having electrical insulating properties.