Diamond LED Thermal Management via Conductive Layers
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Solution Overview
Problem
The increasing demand for smaller and faster electronic devices poses challenges in cooling, as traditional cooling methods become bulky and inefficient, especially for high-power components like LEDs, where heat buildup affects reliability and functionality.
Innovation Solution
Incorporating conductive diamond layers within semiconductor devices, such as LEDs, to enhance thermal conductivity and create a linear conductive pathway between electrodes, allowing for effective heat dissipation while maintaining a compact size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional cooling devices (fans, heat sinks, Peltier devices) are used to reduce heat buildup, then cooling effectiveness is improved, but device size increases and power consumption increases
Solution Approach 1:
The patent merges the cooling function directly into the semiconductor device structure by integrating a heat sink with the semiconductor component, eliminating the need for separate cooling devices. This integration allows the cooling function to be performed within the existing device footprint, resolving the contradiction between effective heat dissipation and device size.
Solution Approach 2:
The semiconductor device structure is designed to serve multiple functions: the housing or mounting structure simultaneously provides mechanical support and acts as a heat sink. This multi-functionality eliminates the need for dedicated cooling components, achieving effective cooling without increasing device volume.
2Temperature
If traditional cooling devices are increased in size to improve cooling effectiveness, then heat dissipation is improved, but device complexity and power requirements increase
Solution Approach 1:
The cooling function is merged with the existing semiconductor device structure, eliminating separate cooling components and their associated complexity. The housing or mounting structure serves dual purposes as both mechanical support and thermal management solution.
Solution Approach 2:
The semiconductor device structure itself provides the cooling function through its design as a heat sink, eliminating the need for external active cooling devices like fans or Peltier elements that would increase system complexity and power requirements.
3Power
If high power and high current demands are increased to improve device functionality, then device performance is improved, but heat buildup increases affecting reliability
Solution Approach 1:
The heat dissipation function is merged into the device structure through an integrated heat sink design, enabling high power operation without compromising reliability. The structure simultaneously provides mechanical support and thermal management, allowing high current demands while maintaining operational reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of conductive diamond layers improves heat dissipation, increases the operational wattage of LEDs, and enhances the thermal properties of semiconductor devices by facilitating lateral heat transfer, leading to more efficient cooling and extended device lifespan.
Implementation Method 1
the conductive diamond layer and the n-type electrode are arranged such that there is a substantially linear conductive pathway therebetween
Implementation Method 2
the crystal lattice of the SiC layer may be epitaxially coupled or matched to the crystal lattice of the conductive diamond layer
Data Source
AI summary
LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.