Nitrogen-Doped Single Crystal Diamond for Magnetometry

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Solution Overview

Problem

Existing diamond-based magnetometers face challenges in optimizing material-related aspects to achieve high sensitivity, as the concentration of negatively charged nitrogen-vacancy defects (NV−) and decoherence time (T2′) are interrelated, leading to limitations in magnetometry figure of merit (FOM).

Innovation Solution

Developing a single crystal diamond material with optimized growth and treatment processes, including high nitrogen content CVD diamond recipes and specific irradiation and annealing schemes, to independently control the concentrations of NV− and T2′, thereby enhancing the magnetometry figure of merit (FOM).

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the concentration of negatively charged nitrogen-vacancy defects (NV−) is increased to improve magnetometry sensitivity, then the magnetometry figure of merit (FOM) improves, but the decoherence time (T2′) decreases

Engineering Contradiction:
Improvemagnetometry sensitivityVSAvoiddecoherence time
Core Design Contradiction:
Measurement precisionVSDuration of action of moving object

Solution Approach 1:

The patent applies parameter changes by systematically varying multiple material parameters including nitrogen concentration, irradiation dose, annealing temperature, and annealing time to independently control both NV− concentration and decoherence time. This multi-parameter optimization approach enables achieving high magnetometry FOM by finding the optimal balance between these two interrelated parameters

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs preliminary action through pre-irradiation treatment before annealing, where the diamond material is first irradiated to create vacancies and defect structures, then subsequently annealed to transform these into NV− centers with desired concentrations. This two-step preliminary preparation enables better control over the final defect concentration and coherence properties

Inventive Principle:
Principle #10Preliminary action

2Quantity of substance

If high nitrogen content CVD diamond recipes are used to increase NV− concentration, then the magnetometry FOM improves, but the material design flexibility and control over T2′ are reduced

Engineering Contradiction:
ImproveNV− concentrationVSAvoidmaterial design flexibility
Core Design Contradiction:
Quantity of substanceVSAdaptability or versatility

Solution Approach 1:

The patent segments the diamond material into regions with different nitrogen concentrations and defect densities by controlling growth conditions and irradiation parameters. This allows creating zones optimized for different functions: high NV− concentration regions for sensitivity and lower nitrogen regions for maintaining long coherence times

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent creates composite diamond structures with varying nitrogen contents and defect configurations within the same crystal. By combining regions with different properties (high NV− concentration vs. long T2′), the material achieves both high sensitivity and design flexibility for different magnetometry application requirements

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Achieves a high magnetometry figure of merit (FOM) of at least 2, with flexibility in material design, allowing for improved sensitivity and controllable properties suitable for various magnetometry applications.

Implementation Method 1

single substitutional nitrogen defects (Ns) which transfer their charge to the neutral nitrogen-vacancy defects (NV0) to convert them into the negatively charged nitrogen-vacancy defects (NV−)

Methodology Applied
Scientific EffectCharge transfer:

Implementation Method 2

formation after diamond material synthesis from native nitrogen defects incorporated during the growth process by irradiating the synthetic diamond material to introduce vacancy defects

Methodology Applied
Scientific EffectIrradiation: Radiation

Implementation Method 3

formation after diamond material synthesis from native nitrogen defects incorporated during the growth process by post-growth annealing the material at a temperature (around 800° C.) which causes migration of the vacancy defects through the crystal lattice

Methodology Applied
Scientific EffectAnnealing: Annealing

Implementation Method 4

Its electronic structure comprises emissive and non-emissive electron spin states which allows the electron spin state of the defect to be read out through photons

Methodology Applied
Scientific EffectFluorescence: Fluorescence

Implementation Method 5

When an external magnetic field or strain field is applied, the degeneracy of the spin sublevels ms=±1 is broken via Zeeman splitting

Methodology Applied
Scientific EffectZeeman splitting: Zeeman Effect

Data Source

PatentUS11396715B2Nitrogen containing single crystal diamond materials optimized for magnetometry applications
Publication Date: 2022.07.26 ELEMENT SIX TECH LTD
  • US11396715B2 patent drawing
  • US11396715B2 patent drawing

AI summary

A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV0); negatively charged nitrogen-vacancy defects (NV−); and single substitutional nitrogen defects (Ns) which transfer their charge to the neutral nitrogen-vacancy defects (NV0) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV−]/[NV0]), [NV−] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T2′ is a decoherence time of the NV− defects, where T2′ is T2* for DC magnetometry or T2 for AC magnetometry.