Diamond Semiconductor N-Type Layer Fabrication for Monolithic Integration
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Solution Overview
Problem
The development of practical diamond-based semiconductors is limited by the difficulty in fabricating high-quality n-type layers, which is essential for monolithic system-level integration and high-power circuit elements.
Innovation Solution
A method for fabricating diamond semiconductors involves seeding a substrate, forming a diamond layer, and introducing n-type donor atoms to create a semiconductor layer with conduction electrons that contribute to the diamond lattice, achieving a mobility of greater than 770 cm^2/Vs at 100 kPa and 300K.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional diamond fabrication methods are used, then diamond layers can be formed, but high-quality n-type layers with sufficient donor atom contribution and electron mobility cannot be achieved
Solution Approach 1:
The patent applies parameter changes by optimizing the concentration of donor atoms (0.16% to 5% phosphorus or nitrogen) and controlling electron mobility parameters (>770 cm²/Vs at 100 kPa and 300K). This resolves the contradiction by establishing specific parameter ranges that enable high-quality n-type layers while maintaining manufacturability through defined fabrication conditions.
Solution Approach 2:
The patent implements local quality by creating n-type regions with specific donor atom concentrations within the diamond structure. By locally introducing phosphorus or nitrogen atoms at controlled concentrations, the patent achieves high electron mobility in specific regions while maintaining the overall diamond crystal structure, thus improving n-type layer quality without compromising the ease of manufacture.
2Reliability
If donor atom concentration is increased to improve n-type conductivity, then electron contribution improves, but fabrication complexity increases due to precise concentration control requirements
Solution Approach 1:
The patent resolves this contradiction by defining specific parameter ranges for donor atom concentration (0.16% to 5%) and electron mobility (>770 cm²/Vs). These parameter specifications enable improved n-type conductivity while managing fabrication complexity through established control targets, allowing manufacturers to achieve reliable results without excessive process complexity.
Solution Approach 2:
The patent substitutes mechanical/physical doping methods with controlled chemical vapor deposition processes that introduce phosphorus or nitrogen atoms during diamond growth. This replacement simplifies the fabrication process by integrating doping into the growth stage rather than requiring separate implantation steps, thus improving n-type conductivity while reducing overall fabrication complexity.
3Adaptability or versatility
If diamond semiconductors are fabricated for monolithic integration, then system-level integration capability improves, but the difficulty of fabricating quality n-type layers remains a limiting factor
Solution Approach 1:
The patent enables monolithic integration capability by establishing precise parameter specifications for n-type layers, including donor atom concentration (0.16% to 5%) and electron mobility (>770 cm²/Vs). These parameter controls ensure manufacturing precision while achieving the adaptability needed for system-level integration, resolving the contradiction between integration capability and layer quality requirements.
Solution Approach 2:
The patent creates universal n-type diamond layers that can be integrated with various diamond-based devices and circuits. By achieving consistent electron mobility >770 cm²/Vs and controlled donor concentrations, the patent produces multi-functional semiconductor layers that can serve different integration requirements, thus improving adaptability while maintaining manufacturing precision through standardized fabrication parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of diamond semiconductors with improved n-type layers, facilitating the creation of high-power circuit elements and monolithically integrated systems, overcoming previous limitations in diamond semiconductor technology.
Implementation Method 1
forming a diamond layer upon the surface of the substrate material
Data Source
AI summary
Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.