Diamond Nitride Semiconductor Void Stress Relief
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Solution Overview
Problem
The integration of a diamond layer with a crystalline nitride layer in semiconductor devices leads to stress-induced cracking due to differences in thermal expansion coefficients, limiting the output characteristics and reliability of high-output operations.
Innovation Solution
A semiconductor device design incorporating a crystalline nitride layer with a silicon structure and a diamond layer on its lateral portions, featuring a void between the diamond layer and the nitride layer to absorb thermal stress, thereby reducing the likelihood of cracking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a diamond layer is brought into contact with a crystalline nitride layer to improve heat dissipation performance, then thermal conductivity is improved, but stress is generated due to difference in thermal expansion coefficients causing cracks in the crystalline nitride layer
Solution Approach 1:
A buffer layer is introduced between the diamond layer and the crystalline nitride layer to act as an intermediary that absorbs thermal stress. This buffer layer has thermal expansion characteristics intermediate between diamond and nitride, preventing direct stress transmission that would cause cracking while maintaining the heat dissipation benefits of diamond.
Solution Approach 2:
The thermal expansion coefficient parameter is managed by selecting buffer layer materials with specific thermal expansion properties that match intermediate values between diamond and nitride. This parameter matching reduces thermal mismatch stress and prevents crack formation during temperature cycling operations.
2Power
If diamond is used to enhance heat dissipation for high-output operation, then power handling capability is improved, but stress-induced cracks limit the reliability
Solution Approach 1:
The buffer layer serves as a stress-absorbing intermediary that enables the diamond layer to function at high power levels without transmitting destructive thermal stress to the nitride layer, thus allowing high-output operation while maintaining device integrity and reliability.
Solution Approach 2:
The buffer layer provides beforehand cushioning against thermal stress by being pre-positioned between the diamond and nitride layers. This protective structure absorbs expansion stresses before they can propagate into cracks, enabling reliable high-power operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The void effectively relaxes thermal stress between the diamond and nitride layers, suppressing cracking and enhancing heat dissipation performance while enabling high-output operations without compromising device integrity.
Implementation Method 1
a stress is generated due to difference in thermal expansion coefficients between the diamond and the crystalline nitride layer
Implementation Method 2
Diamond has the highest thermal conductivity among substances and is excellent in heat dissipation performance
Data Source
AI summary
An object is to provide a technology capable of suppressing a crack of a crystalline nitride layer which is generated due to a stress caused by difference in thermal expansion coefficients between a crystalline nitride and diamond. A semiconductor device includes a crystalline nitride layer, a structure containing silicon, and a diamond layer. The structure is disposed on a first main surface of the crystalline nitride layer. The diamond layer is disposed at least on a lateral portion of the structure and has a void between the diamond layer and the first main surface of the crystalline nitride layer. The void is a stress absorbing space, for example.