Diamond Patterned Structure for Semiconductor Heat Extraction
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Solution Overview
Problem
Semiconductor surface emitting devices face inefficiencies in heat extraction due to their configuration, where the active heat generation region is far from the substrate and has poor heat conductivity, limiting high power applications and light quality.
Innovation Solution
A diamond patterned structure is grown around the semiconductor device to create close contact between each region and diamond, enabling efficient heat extraction by using selective area growth and connecting the diamond layer to a heat exchanger through thermally conducting vias.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor surface emitting devices are used for high power applications, then light extraction efficiency and scalability are improved, but heat extraction efficiency deteriorates due to poor thermal conductivity and large distance from heat generation region to substrate
Solution Approach 1:
A diamond layer is introduced as an intermediary thermal management component between the semiconductor device and the heat sink. The diamond layer, grown selectively on the substrate, provides a high thermal conductivity pathway that bridges the thermal gap between the heat-generating device and the heat dissipation system, resolving the contradiction between maintaining device performance and improving heat extraction.
Solution Approach 2:
The invention transitions from conventional planar heat spreading to a three-dimensional diamond layer structure grown on the substrate surface. This dimensional change creates a thermal management architecture where heat can be extracted more efficiently through the vertical and lateral thermal pathways provided by the diamond layer, overcoming the limitations of traditional two-dimensional heat dissipation.
2Temperature
If diamond layer is grown on the substrate to improve heat extraction, then heat extraction efficiency is improved, but manufacturing complexity increases due to selective area growth requirements
Solution Approach 1:
The diamond layer growth is segmented into selective areas on the substrate rather than covering the entire surface. This segmentation allows diamond to be grown only in regions where thermal management is most critical, simplifying the manufacturing process by reducing growth time and material usage while maintaining effective heat extraction from the semiconductor device regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances heat extraction efficiency, allowing for high output and quality power emission by bringing the heat sink closer to the active region, surpassing traditional methods.
Implementation Method 1
diamond is the best heat-spreader, this method leads to optimal heat extraction
Implementation Method 2
A diamond layer is deposited, for example by chemical vapor deposition technique (CVD)
Data Source
Figure 1
Figure 2
AI summary
A method for efficient heat removal from a semiconducting device made from III-V semiconductor crystals includes depositing a diamond seeding layer on a patterned substrate.