Diamond-Metal RF Package Flanges for Heat and CTE Matching
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Solution Overview
Problem
High power semiconductor packages face challenges in thermal conductivity and coefficient of thermal expansion (CTE) compatibility, particularly when using metal flanges with materials like GaN and SiC, where higher thermal conductivity is often accompanied by higher CTE, leading to mechanical issues under heating cycles.
Innovation Solution
Incorporating diamond particles into the flanges and slugs of high power RF packages, combined with metals like Silver, to create composite materials that offer high thermal conductivity while matching the CTE of GaN and SiC semiconductor materials, thus enhancing thermal dissipation and mechanical reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional metal flanges (Copper, Copper Molybdenum) are used to achieve high thermal conductivity, then thermal dissipation performance is improved, but coefficient of thermal expansion compatibility with GaN and SiC semiconductor materials deteriorates, leading to mechanical separation under thermal cycling
Solution Approach 1:
The patent applies composite materials by combining diamond particles with metal matrices (such as copper or copper molybdenum) to create flanges that simultaneously achieve high thermal conductivity from both diamond and metal components while tuning the coefficient of thermal expansion to match GaN and SiC semiconductor materials, thereby preventing mechanical separation under thermal cycling conditions
2Reliability
If diamond particles are incorporated into flanges to achieve high thermal conductivity and CTE matching, then thermal dissipation and mechanical reliability are improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies parameter changes by controlling the size, concentration, and distribution of diamond particles within the metal matrix, as well as adjusting the metal composition ratios, to optimize both thermal conductivity and CTE matching while maintaining manufacturability through controlled variation of material parameters rather than fundamental design changes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diamond composite flanges provide superior thermal conductivity and CTE compatibility, enabling reliable heat dissipation and attachment of high power semiconductor devices without mechanical separation under thermal cycling, outperforming conventional materials like Copper and Copper Molybdenum.
Implementation Method 1
The flange incorporates a composite core material including diamond particles distributed in metal... The flange exhibits thermal conductivity greater than that of Copper (Cu), Aluminum Nitride (AlN), Copper Molybdenum (CuMo), Copper Tungsten (CuW)
Data Source
AI summary
Semiconductor device packages and methods of manufacture are described. In one example, a semiconductor device package includes a flange, a frame secured to a major surface of the flange, with the frame forming an air cavity bounded in part by a surface of the flange, and at least one conductive lead that extends from outside the frame, through a portion of the frame, and is exposed within the air cavity for wire bonding. Other packages without air cavities are also described. The flange can incorporate a composite core material including diamond particles distributed in metal. The flange offers improved thermal conductivity, for greater heat dissipation from and additional performance of semiconductor devices within the packages. The flange exhibits thermal conductivity greater than that of Copper and other materials. The flange also exhibits a coefficient of thermal expansion suitable for bonding semiconductor die including GaN and SiC materials to the flange.