Diamond-Layer Semiconductor Structure With Micro Through-Hole Routing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices using diamond substrates face challenges in miniaturization and heat dissipation due to the difficulty in forming micro through holes, which are essential for improving both characteristics simultaneously.
Innovation Solution
A semiconductor device design featuring a substrate with a protrusion and a diamond layer, where a through hole penetrates the protrusion, base, and semiconductor layer, allowing for heat transfer to the diamond layer without processing the diamond substrate, and a second metal layer covers the inner side of the through hole for electrical connection, enabling miniaturization and enhanced heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a diamond substrate is used to improve heat dissipation, then heat dissipation performance is improved, but it becomes impossible to form micro through holes for miniaturization
Solution Approach 1:
The substrate is divided into a base portion and a protrusion portion, with the through hole formed only in the protrusion portion. This segmentation allows the through hole to be created in a non-diamond material region while maintaining the diamond substrate for heat dissipation, thus resolving the contradiction between heat dissipation performance and miniaturization capability.
2Length of moving object
If micro through holes are formed in the diamond substrate to enable miniaturization, then miniaturization is achieved, but the manufacturing process becomes extremely difficult
Solution Approach 1:
The protrusion portion is formed with different material properties or structural characteristics compared to the base diamond substrate. This local quality difference enables the through hole to be formed easily in the protrusion portion using conventional semiconductor manufacturing techniques, while the diamond base substrate maintains its excellent heat dissipation properties without requiring difficult micro-hole formation processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design allows for the simultaneous improvement of miniaturization and heat dissipation in semiconductor devices by facilitating the formation of micro through holes without requiring a mask for processing the diamond layer, thereby reducing the number of steps and ensuring effective heat transfer.
Implementation Method 1
a diamond layer having a third surface in contact with the second surface... Simultaneous improvement of miniaturization and heat dissipation
Data Source
AI summary
A semiconductor device includes a substrate having a base provided with a first surface and a second surface opposite to the first surface, and a protrusion protruding from the base in a direction opposite to the first surface, a semiconductor layer in contact with the first surface, a first metal layer provided on the semiconductor layer in contact with the semiconductor layer, and overlapping the protrusion in a plan view perpendicular to the first surface, a diamond layer having a third surface in contact with the second surface, and a fourth surface opposite to the third surface, and a second metal layer covering an inner side of a through hole and the fourth surface and electrically connected to the first metal layer. The through hole penetrates the protrusion, the base, and the semiconductor layer and reaches the first metal layer.